Fabrication of CoFeB–SiO2 Films With Large Uniaxial Anisotropy by Facing Target Sputtering and its Application to High-Frequency Planar-Type Spiral Inductors
A comprehensive study on fabrication of CoFeB–SiO2 films with large in-plane magnetic anisotropy for the use in high-frequency inductors in power electronics circuits was conducted. The magnetic films were deposited using facing target sputtering (FTS), which can introduce large uniaxial magnetic an...
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Veröffentlicht in: | IEEE transactions on magnetics 2023-07, Vol.59 (11), p.1 |
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container_title | IEEE transactions on magnetics |
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creator | Takamura, Yota Nitta, Honami Kawahara, Kazuma Kaneko, Tadayuki Ishido, Ryosuke Miyazaki, Tatsuya Hosoda, Naoki Fujisaki, Keisuke Nakagawa, Shigeki |
description | A comprehensive study on fabrication of CoFeB–SiO2 films with large in-plane magnetic anisotropy for the use in high-frequency inductors in power electronics circuits was conducted. The magnetic films were deposited using facing target sputtering (FTS), which can introduce large uniaxial magnetic anisotropy in the plane. A multilayer structure consisting of CoFeB–SiO2 and SiO2 layers suppressed columnar growth and thus reduced undesired perpendicular magnetic anisotropy (PMA). As a result, a [Formula Omitted]-thick magnetic layer was achieved with excellent soft-magnetic properties and no stripe domain structure. The effectiveness of these magnetic films was demonstrated by fabricating and characterizing planar-type spiral coils. This development of micromagnetic inductors using the magnetic layer shows great potential for use in high-frequency power electronics applications. |
doi_str_mv | 10.1109/TMAG.2023.3291879 |
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The magnetic films were deposited using facing target sputtering (FTS), which can introduce large uniaxial magnetic anisotropy in the plane. A multilayer structure consisting of CoFeB–SiO2 and SiO2 layers suppressed columnar growth and thus reduced undesired perpendicular magnetic anisotropy (PMA). As a result, a [Formula Omitted]-thick magnetic layer was achieved with excellent soft-magnetic properties and no stripe domain structure. The effectiveness of these magnetic films was demonstrated by fabricating and characterizing planar-type spiral coils. This development of micromagnetic inductors using the magnetic layer shows great potential for use in high-frequency power electronics applications.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2023.3291879</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><subject>Columnar structure ; Electronics ; Inductors ; Magnetic anisotropy ; Magnetic films ; Magnetic properties ; Magnetism ; Multilayers ; Silicon dioxide ; Sputtering</subject><ispartof>IEEE transactions on magnetics, 2023-07, Vol.59 (11), p.1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The magnetic films were deposited using facing target sputtering (FTS), which can introduce large uniaxial magnetic anisotropy in the plane. A multilayer structure consisting of CoFeB–SiO2 and SiO2 layers suppressed columnar growth and thus reduced undesired perpendicular magnetic anisotropy (PMA). As a result, a [Formula Omitted]-thick magnetic layer was achieved with excellent soft-magnetic properties and no stripe domain structure. The effectiveness of these magnetic films was demonstrated by fabricating and characterizing planar-type spiral coils. This development of micromagnetic inductors using the magnetic layer shows great potential for use in high-frequency power electronics applications.</description><subject>Columnar structure</subject><subject>Electronics</subject><subject>Inductors</subject><subject>Magnetic anisotropy</subject><subject>Magnetic films</subject><subject>Magnetic properties</subject><subject>Magnetism</subject><subject>Multilayers</subject><subject>Silicon dioxide</subject><subject>Sputtering</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNo1jk1OwzAQhS0EEqVwAHaWWKf4N7GXoSJtpaIiNYhl5SRO6yrYwXEksuMOHIC7cRKCgNXMPL153wPgGqMZxkje5g_pYkYQoTNKJBaJPAETLBmOEIrlKZgghEUkWczOwUXXHceTcYwm4DNThTelCsZZ6Go4d5m--3r_2JoNgZlpXjr4bMIBrpXfa_hkjXozqoGpNZ0L3rUDLAaYqdLYPcx_PAFu2z4E7X8UZStoQgfTtm3-IcHBpdkfoszr117bcoCPjbLKR_nQ6vHZ-DF_Zau-DM53l-CsVk2nr_7mFOTZfT5fRuvNYjVP15FNCI4qqqmWnI17zSUpi7riIhajUuCEyaSiHDMcU0a1EozXhRI0ppJQxUkdF5ROwc1vbOvd2KoLu6PrvR2JOyIE5ohwiek3789tDw</recordid><startdate>202307</startdate><enddate>202307</enddate><creator>Takamura, Yota</creator><creator>Nitta, Honami</creator><creator>Kawahara, Kazuma</creator><creator>Kaneko, Tadayuki</creator><creator>Ishido, Ryosuke</creator><creator>Miyazaki, Tatsuya</creator><creator>Hosoda, Naoki</creator><creator>Fujisaki, Keisuke</creator><creator>Nakagawa, Shigeki</creator><general>The Institute of Electrical and Electronics Engineers, Inc. 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The magnetic films were deposited using facing target sputtering (FTS), which can introduce large uniaxial magnetic anisotropy in the plane. A multilayer structure consisting of CoFeB–SiO2 and SiO2 layers suppressed columnar growth and thus reduced undesired perpendicular magnetic anisotropy (PMA). As a result, a [Formula Omitted]-thick magnetic layer was achieved with excellent soft-magnetic properties and no stripe domain structure. The effectiveness of these magnetic films was demonstrated by fabricating and characterizing planar-type spiral coils. This development of micromagnetic inductors using the magnetic layer shows great potential for use in high-frequency power electronics applications.</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/TMAG.2023.3291879</doi><oa>free_for_read</oa></addata></record> |
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subjects | Columnar structure Electronics Inductors Magnetic anisotropy Magnetic films Magnetic properties Magnetism Multilayers Silicon dioxide Sputtering |
title | Fabrication of CoFeB–SiO2 Films With Large Uniaxial Anisotropy by Facing Target Sputtering and its Application to High-Frequency Planar-Type Spiral Inductors |
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