Oxidized-Silicon-Terminated Diamond p-FETs With SiO2-Filling Shallow Trench Isolation Structures

Herein, excellent electrical performances were achieved for the oxidized-silicon-terminated (C-Si-O) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) using chemical-vapor-deposition grown SiO2 as the filling insulator of shallow-trench-isolation (STI) structures and gate oxide. T...

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