Demonstration of near-ideal Schottky contacts to Si-doped AlN

Near-ideal behavior in Schottky contacts to Si-doped AlN was observed as evidenced by a low ideality factor of 1.5 at room temperature. A temperature-independent Schottky barrier height of 1.9 eV was extracted from temperature-dependent I–V measurements. An activation energy of ∼300 meV was observed...

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Veröffentlicht in:	Applied physics letters 2023-10, Vol.123 (17)
Hauptverfasser:	Quiñones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., Rathkanthiwar, S., Tweedie, J., Pavlidis, S., Kohn, E., Collazo, R., Sitar, Z.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Extreme environments High temperature Room temperature Silicon Temperature dependence
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