Crossbar operation of BiFeO3/Ce–CaMnO3 ferroelectric tunnel junctions: From materials to integration
Ferroelectric Tunnel Junctions (FTJs) are a candidate for the hardware realization of synapses in artificial neural networks. The fabrication process for a 784 × 100 crossbar array of 500 nm large FTJs, exhibiting effective On/Off currents ratio in the range 50–100, is presented. First, the epitaxia...
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| Veröffentlicht in: | Journal of materials research 2023-10, Vol.38 (19), p.4335-4344 |
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| creator | Halter, Mattia Morabito, Elisabetta Olziersky, Antonis Carrétéro, Cécile Chanthbouala, André Falcone, Donato Francesco Offrein, Bert Jan Bégon-Lours, Laura |
| description | Ferroelectric Tunnel Junctions (FTJs) are a candidate for the hardware realization of synapses in artificial neural networks. The fabrication process for a 784 × 100 crossbar array of 500 nm large FTJs, exhibiting effective On/Off currents ratio in the range 50–100, is presented. First, the epitaxial 4 nm-BiFeO
3
/Ca
0.96
Ce
0.04
MnO
3
//YAlO
3
is combined with Ni electrodes. The oxidation of Ni during the processing affects the polarity of the FTJ and the On/Off ratio, which becomes comparable to that of CMOS-compatible HfZrO
4
junctions. The latter have a wider coercive field distribution: consequently, in test crossbar arrays, BiFeO
3
exhibits a smaller cross-talk than HfZrO
4
. Furthermore, the relatively larger threshold for ferroelectric switching in BiFeO
3
allows the use application of half-programming schemes for supervised and unsupervised learning. Second, the heterostructure is combined with W and Pt electrodes. The design is optimized for the controlled collapse chip connection to neuromorphic circuits.
Graphical abstract |
| doi_str_mv | 10.1557/s43578-023-01158-8 |
| format | Article |
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3
/Ca
0.96
Ce
0.04
MnO
3
//YAlO
3
is combined with Ni electrodes. The oxidation of Ni during the processing affects the polarity of the FTJ and the On/Off ratio, which becomes comparable to that of CMOS-compatible HfZrO
4
junctions. The latter have a wider coercive field distribution: consequently, in test crossbar arrays, BiFeO
3
exhibits a smaller cross-talk than HfZrO
4
. Furthermore, the relatively larger threshold for ferroelectric switching in BiFeO
3
allows the use application of half-programming schemes for supervised and unsupervised learning. Second, the heterostructure is combined with W and Pt electrodes. The design is optimized for the controlled collapse chip connection to neuromorphic circuits.
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3
/Ca
0.96
Ce
0.04
MnO
3
//YAlO
3
is combined with Ni electrodes. The oxidation of Ni during the processing affects the polarity of the FTJ and the On/Off ratio, which becomes comparable to that of CMOS-compatible HfZrO
4
junctions. The latter have a wider coercive field distribution: consequently, in test crossbar arrays, BiFeO
3
exhibits a smaller cross-talk than HfZrO
4
. Furthermore, the relatively larger threshold for ferroelectric switching in BiFeO
3
allows the use application of half-programming schemes for supervised and unsupervised learning. Second, the heterostructure is combined with W and Pt electrodes. The design is optimized for the controlled collapse chip connection to neuromorphic circuits.
Graphical abstract</description><subject>Applied and Technical Physics</subject><subject>Arrays</subject><subject>Artificial neural networks</subject><subject>Biomaterials</subject><subject>Chemistry and Materials Science</subject><subject>Circuit design</subject><subject>Coercivity</subject><subject>Design optimization</subject><subject>Electrodes</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Heterostructures</subject><subject>Inorganic Chemistry</subject><subject>Invited Feature Paper</subject><subject>Materials Engineering</subject><subject>Materials research</subject><subject>Materials Science</subject><subject>Nanotechnology</subject><subject>Oxidation</subject><subject>Synapses</subject><subject>Tunnel junctions</subject><subject>Unsupervised learning</subject><issn>0884-2914</issn><issn>2044-5326</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp9kE1OwzAQRi0EEqVwAVaWWIf6N7HZQUQBqagbWFtOMq5StXax3QU77sANOQkpQWLHaqTR977RPIQuKbmmUlazJLisVEEYLwilUhXqCE0YEaKQnJXHaEKUEgXTVJyis5TWhFBJKjFBro4hpcZGHHYQbe6Dx8Hhu34OSz6r4evjs7bPfsmxgxgDbKDNsW9x3nsPG7ze-_bApBs8j2GLtzZD7O0m4Rxw7zOsxs5zdOKGLVz8zil6nd-_1I_FYvnwVN8uipZTkQurVdk1QjOpeSOGj5TQXWUtI8QCta1tXAWVlA2UnNoOStUQoqlrleqEA82n6Grs3cXwtoeUzTrsox9OGqYqLRWlnA0pNqbaw_MRnNnFfmvju6HEHHya0acZfJofn0YNEB-hNIT9CuJf9T_UN_Zlekw</recordid><startdate>20231014</startdate><enddate>20231014</enddate><creator>Halter, Mattia</creator><creator>Morabito, Elisabetta</creator><creator>Olziersky, Antonis</creator><creator>Carrétéro, Cécile</creator><creator>Chanthbouala, André</creator><creator>Falcone, Donato Francesco</creator><creator>Offrein, Bert Jan</creator><creator>Bégon-Lours, Laura</creator><general>Springer International Publishing</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0009-0001-7901-3909</orcidid><orcidid>https://orcid.org/0009-0005-8732-3826</orcidid><orcidid>https://orcid.org/0000-0001-8468-9105</orcidid><orcidid>https://orcid.org/0000-0003-2520-3317</orcidid><orcidid>https://orcid.org/0000-0001-6082-0068</orcidid><orcidid>https://orcid.org/0000-0002-7328-9621</orcidid></search><sort><creationdate>20231014</creationdate><title>Crossbar operation of BiFeO3/Ce–CaMnO3 ferroelectric tunnel junctions: From materials to integration</title><author>Halter, Mattia ; 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The fabrication process for a 784 × 100 crossbar array of 500 nm large FTJs, exhibiting effective On/Off currents ratio in the range 50–100, is presented. First, the epitaxial 4 nm-BiFeO
3
/Ca
0.96
Ce
0.04
MnO
3
//YAlO
3
is combined with Ni electrodes. The oxidation of Ni during the processing affects the polarity of the FTJ and the On/Off ratio, which becomes comparable to that of CMOS-compatible HfZrO
4
junctions. The latter have a wider coercive field distribution: consequently, in test crossbar arrays, BiFeO
3
exhibits a smaller cross-talk than HfZrO
4
. Furthermore, the relatively larger threshold for ferroelectric switching in BiFeO
3
allows the use application of half-programming schemes for supervised and unsupervised learning. Second, the heterostructure is combined with W and Pt electrodes. The design is optimized for the controlled collapse chip connection to neuromorphic circuits.
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| subjects | Applied and Technical Physics Arrays Artificial neural networks Biomaterials Chemistry and Materials Science Circuit design Coercivity Design optimization Electrodes Ferroelectric materials Ferroelectricity Heterostructures Inorganic Chemistry Invited Feature Paper Materials Engineering Materials research Materials Science Nanotechnology Oxidation Synapses Tunnel junctions Unsupervised learning |
| title | Crossbar operation of BiFeO3/Ce–CaMnO3 ferroelectric tunnel junctions: From materials to integration |
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