Spin valve effect in CrN/GaN van der Waals heterostructures
In the pursuit of developing high-performance low-dimensional spintronic devices, two-dimensional van der Waals heterostructures comprising non-magnetic nitride and ferromagnetic materials have emerged as a crucial area of investigation. This paper proposes a novel structure that employs hexagonal t...
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| Veröffentlicht in: | Journal of applied physics 2023-10, Vol.134 (14) |
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| container_title | Journal of applied physics |
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| creator | Xue, Junjun Chen, Wei Tao, Tao Zhi, Ting Shao, Pengfei Cai, Qing Yang, Guofeng Wang, Jin Chen, Dunjun Zhang, Rong |
| description | In the pursuit of developing high-performance low-dimensional spintronic devices, two-dimensional van der Waals heterostructures comprising non-magnetic nitride and ferromagnetic materials have emerged as a crucial area of investigation. This paper proposes a novel structure that employs hexagonal two-dimensional semiconductor GaN flanked by two half-metallic two-dimensional CrN layers. The stability of the proposed structure is verified via first-principles calculations, which indicate good thermodynamic and magnetic stability. The transport characteristics of electrons in the structure are analyzed through the Band structures and density of states. Specifically, the study examines the spin polarizability of parallel and anti-parallel magnetic configurations of the CrN/GaN/CrN vdW heterostructure, and the results demonstrate a significant spin valve effect. Overall, the study establishes the potential of the CrN/GaN/CrN vdW heterostructure as a candidate for the development of innovative spintronic devices. |
| doi_str_mv | 10.1063/5.0165709 |
| format | Article |
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This paper proposes a novel structure that employs hexagonal two-dimensional semiconductor GaN flanked by two half-metallic two-dimensional CrN layers. The stability of the proposed structure is verified via first-principles calculations, which indicate good thermodynamic and magnetic stability. The transport characteristics of electrons in the structure are analyzed through the Band structures and density of states. Specifically, the study examines the spin polarizability of parallel and anti-parallel magnetic configurations of the CrN/GaN/CrN vdW heterostructure, and the results demonstrate a significant spin valve effect. Overall, the study establishes the potential of the CrN/GaN/CrN vdW heterostructure as a candidate for the development of innovative spintronic devices.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0165709</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Chromium nitride ; Ferromagnetic materials ; First principles ; Gallium nitrides ; Heterostructures ; Low dimensional semiconductors ; Spin valves ; Stability analysis ; Structural stability ; Transport properties</subject><ispartof>Journal of applied physics, 2023-10, Vol.134 (14)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). 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This paper proposes a novel structure that employs hexagonal two-dimensional semiconductor GaN flanked by two half-metallic two-dimensional CrN layers. The stability of the proposed structure is verified via first-principles calculations, which indicate good thermodynamic and magnetic stability. The transport characteristics of electrons in the structure are analyzed through the Band structures and density of states. Specifically, the study examines the spin polarizability of parallel and anti-parallel magnetic configurations of the CrN/GaN/CrN vdW heterostructure, and the results demonstrate a significant spin valve effect. Overall, the study establishes the potential of the CrN/GaN/CrN vdW heterostructure as a candidate for the development of innovative spintronic devices.</description><subject>Applied physics</subject><subject>Chromium nitride</subject><subject>Ferromagnetic materials</subject><subject>First principles</subject><subject>Gallium nitrides</subject><subject>Heterostructures</subject><subject>Low dimensional semiconductors</subject><subject>Spin valves</subject><subject>Stability analysis</subject><subject>Structural stability</subject><subject>Transport properties</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLxDAQhYMoWFcP_oOCJ4XuTtpkm-BJyroKy3pwwWNI0wl2WduapAv-eyPds6dhHt_MvHmE3FKYU1gWCz4HuuQlyDOSUBAyKzmHc5IA5DQTspSX5Mr7PQClopAJeXwf2i496sMRU7QWTUhjX7ntYq23Ue_SBl36ofXBp58Y0PU-uNGE0aG_Jhc26nhzqjOye17tqpds87Z-rZ42mcl5HjJdmkI2tQWBNQihmdQ8t4Yj1CBNYwzynFnUom4YUiw0Sga6hMbGybouZuRuWju4_ntEH9S-H10XL6pcxPckY0xG6n6iTLToHVo1uPZLux9FQf1Fo7g6RRPZh4n1pg06tH33D_wLWDtjRw</recordid><startdate>20231014</startdate><enddate>20231014</enddate><creator>Xue, Junjun</creator><creator>Chen, Wei</creator><creator>Tao, Tao</creator><creator>Zhi, Ting</creator><creator>Shao, Pengfei</creator><creator>Cai, Qing</creator><creator>Yang, Guofeng</creator><creator>Wang, Jin</creator><creator>Chen, Dunjun</creator><creator>Zhang, Rong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-9881-7208</orcidid><orcidid>https://orcid.org/0000-0002-4409-9685</orcidid><orcidid>https://orcid.org/0000-0003-0015-6331</orcidid><orcidid>https://orcid.org/0000-0003-1661-2389</orcidid><orcidid>https://orcid.org/0000-0003-2214-1771</orcidid><orcidid>https://orcid.org/0000-0001-8601-8583</orcidid><orcidid>https://orcid.org/0009-0008-8813-3823</orcidid><orcidid>https://orcid.org/0000-0003-4930-2256</orcidid></search><sort><creationdate>20231014</creationdate><title>Spin valve effect in CrN/GaN van der Waals heterostructures</title><author>Xue, Junjun ; Chen, Wei ; Tao, Tao ; Zhi, Ting ; Shao, Pengfei ; Cai, Qing ; Yang, Guofeng ; Wang, Jin ; Chen, Dunjun ; Zhang, Rong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-a7c39dbf08eb088a49a52fc5e0b09cdcce524fea8bd4e1e3ae940a70dfa7cbb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Applied physics</topic><topic>Chromium nitride</topic><topic>Ferromagnetic materials</topic><topic>First principles</topic><topic>Gallium nitrides</topic><topic>Heterostructures</topic><topic>Low dimensional semiconductors</topic><topic>Spin valves</topic><topic>Stability analysis</topic><topic>Structural stability</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xue, Junjun</creatorcontrib><creatorcontrib>Chen, Wei</creatorcontrib><creatorcontrib>Tao, Tao</creatorcontrib><creatorcontrib>Zhi, Ting</creatorcontrib><creatorcontrib>Shao, Pengfei</creatorcontrib><creatorcontrib>Cai, Qing</creatorcontrib><creatorcontrib>Yang, Guofeng</creatorcontrib><creatorcontrib>Wang, Jin</creatorcontrib><creatorcontrib>Chen, Dunjun</creatorcontrib><creatorcontrib>Zhang, Rong</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xue, Junjun</au><au>Chen, Wei</au><au>Tao, Tao</au><au>Zhi, Ting</au><au>Shao, Pengfei</au><au>Cai, Qing</au><au>Yang, Guofeng</au><au>Wang, Jin</au><au>Chen, Dunjun</au><au>Zhang, Rong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin valve effect in CrN/GaN van der Waals heterostructures</atitle><jtitle>Journal of applied physics</jtitle><date>2023-10-14</date><risdate>2023</risdate><volume>134</volume><issue>14</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>In the pursuit of developing high-performance low-dimensional spintronic devices, two-dimensional van der Waals heterostructures comprising non-magnetic nitride and ferromagnetic materials have emerged as a crucial area of investigation. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Chromium nitride Ferromagnetic materials First principles Gallium nitrides Heterostructures Low dimensional semiconductors Spin valves Stability analysis Structural stability Transport properties |
| title | Spin valve effect in CrN/GaN van der Waals heterostructures |
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