Electron Diffraction Study of the Structural Changes in a Thin GeTe Crystal Exposed to High-Power Femtosecond Laser Radiation

The possibility of amorphization of a thin germanium telluride crystal irradiated by high-power 800-nm femtosecond laser pulses has been investigated. The sample was a 20-nm-thick film of crystalline semiconductor GeTe. An electron diffractometer with a source of short photoelectron pulses was used...

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Veröffentlicht in:Bulletin of the Lebedev Physics Institute 2023-10, Vol.50 (Suppl 5), p.S552-S559
Hauptverfasser: Mironov, B. N., Kochikov, I. V., Aseev, S. A., Ionin, V. V., Kiselev, A. V., Lotin, A. A., Chekalin, S. V., Ischenko, A. A., Ryabov, E. A.
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Sprache:eng
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