Electron Diffraction Study of the Structural Changes in a Thin GeTe Crystal Exposed to High-Power Femtosecond Laser Radiation
The possibility of amorphization of a thin germanium telluride crystal irradiated by high-power 800-nm femtosecond laser pulses has been investigated. The sample was a 20-nm-thick film of crystalline semiconductor GeTe. An electron diffractometer with a source of short photoelectron pulses was used...
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Veröffentlicht in: | Bulletin of the Lebedev Physics Institute 2023-10, Vol.50 (Suppl 5), p.S552-S559 |
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