Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique
A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag)‐doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO 2 ) in a reaction chamber under high pressure (3000 psi) at lo...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2023-10, Vol.220 (19) |
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| container_title | Physica status solidi. A, Applications and materials science |
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| creator | Huang, Jen-Wei Chen, Po-Hsun Yeh, Tsung-Han Yang, Chih-Cheng |
| description | A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag)‐doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO
2
) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag‐doped SiO
2
(Ag:SiO
2
) thin‐film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO
2
‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multilevel switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO
2
‐based device with the SCF sulfur treatment. |
| doi_str_mv | 10.1002/pssa.202300453 |
| format | Article |
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2
) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag‐doped SiO
2
(Ag:SiO
2
) thin‐film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO
2
‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multilevel switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO
2
‐based device with the SCF sulfur treatment.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.202300453</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>Carbon dioxide ; Chemical bonds ; Crystallization ; Electrical measurement ; Silicon dioxide ; Silver ; Sulfur ; Supercritical fluids ; Switching ; Thin films</subject><ispartof>Physica status solidi. A, Applications and materials science, 2023-10, Vol.220 (19)</ispartof><rights>2023 Wiley‐VCH GmbH</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c267t-18b404f566c50245e35251c3e9df1cb232dcd0270b09a18e76a8da2c500562eb3</citedby><cites>FETCH-LOGICAL-c267t-18b404f566c50245e35251c3e9df1cb232dcd0270b09a18e76a8da2c500562eb3</cites><orcidid>0000-0001-6639-9964</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Huang, Jen-Wei</creatorcontrib><creatorcontrib>Chen, Po-Hsun</creatorcontrib><creatorcontrib>Yeh, Tsung-Han</creatorcontrib><creatorcontrib>Yang, Chih-Cheng</creatorcontrib><title>Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique</title><title>Physica status solidi. A, Applications and materials science</title><description>A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag)‐doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO
2
) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag‐doped SiO
2
(Ag:SiO
2
) thin‐film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO
2
‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multilevel switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO
2
‐based device with the SCF sulfur treatment.</description><subject>Carbon dioxide</subject><subject>Chemical bonds</subject><subject>Crystallization</subject><subject>Electrical measurement</subject><subject>Silicon dioxide</subject><subject>Silver</subject><subject>Sulfur</subject><subject>Supercritical fluids</subject><subject>Switching</subject><subject>Thin films</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNo9kF1LwzAUhoMoOKe3Xge83sxHm3aXY04dTAQ3r0uanqwZXVqTdOJP8d-aMtnV-XrO-8KL0D0lU0oIe-y8l1NGGCckSfkFGtFcsIngdHZ57gm5Rjfe7wckyegI_a7sEXwwOxmM3eFQA15qDSp43Gq86RvdO7x1IMMBbMCtxW8ygDOywYtaOqmGIf4rj6Wt8Af4OEmrAG--TVD1IPoERxMX865rjIo-rfU4Huso34FTzsT3qPfc9KbCW1C1NV893KIrLRsPd_91jD6fl9vF62T9_rJazNcTxUQWJjQvE5LoVAiVEpakwFOWUsVhVmmqSsZZpSrCMlKSmaQ5ZELmlWQRJqlgUPIxejjpdq6Ntj4U-7Z3NloWLM-44CyCkZqeKOVa7x3oonPmIN1PQUkxxF8M8Rfn-Pkfr7l7rQ</recordid><startdate>202310</startdate><enddate>202310</enddate><creator>Huang, Jen-Wei</creator><creator>Chen, Po-Hsun</creator><creator>Yeh, Tsung-Han</creator><creator>Yang, Chih-Cheng</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6639-9964</orcidid></search><sort><creationdate>202310</creationdate><title>Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique</title><author>Huang, Jen-Wei ; Chen, Po-Hsun ; Yeh, Tsung-Han ; Yang, Chih-Cheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c267t-18b404f566c50245e35251c3e9df1cb232dcd0270b09a18e76a8da2c500562eb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Carbon dioxide</topic><topic>Chemical bonds</topic><topic>Crystallization</topic><topic>Electrical measurement</topic><topic>Silicon dioxide</topic><topic>Silver</topic><topic>Sulfur</topic><topic>Supercritical fluids</topic><topic>Switching</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Jen-Wei</creatorcontrib><creatorcontrib>Chen, Po-Hsun</creatorcontrib><creatorcontrib>Yeh, Tsung-Han</creatorcontrib><creatorcontrib>Yang, Chih-Cheng</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, Jen-Wei</au><au>Chen, Po-Hsun</au><au>Yeh, Tsung-Han</au><au>Yang, Chih-Cheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><date>2023-10</date><risdate>2023</risdate><volume>220</volume><issue>19</issue><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag)‐doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO
2
) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag‐doped SiO
2
(Ag:SiO
2
) thin‐film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO
2
‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multilevel switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO
2
‐based device with the SCF sulfur treatment.</abstract><cop>Weinheim</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/pssa.202300453</doi><orcidid>https://orcid.org/0000-0001-6639-9964</orcidid></addata></record> |
| fulltext | fulltext |
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| ispartof | Physica status solidi. A, Applications and materials science, 2023-10, Vol.220 (19) |
| issn | 1862-6300 1862-6319 |
| language | eng |
| recordid | cdi_proquest_journals_2873632056 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Carbon dioxide Chemical bonds Crystallization Electrical measurement Silicon dioxide Silver Sulfur Supercritical fluids Switching Thin films |
| title | Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique |
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