Interfacial defect healing of In2S3/Sb2(S,Se)3 heterojunction solar cells with a novel wide-bandgap InOCl passivator

In2S3 has been regarded as a promising nontoxic alternative to CdS as an n-type electron transporting layer (ETL) for environmentally friendly antimony chalcogenide solar cells. However, the high-density of vacancy defects in In2S3 cause severe interfacial charge recombination in optoelectronic devi...

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Veröffentlicht in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2023-09, Vol.11 (37), p.19914-19924
Hauptverfasser: Wang, Changxue, Li, Dongdong, Mao, Xiaoli, Wan, Lei, Cheng, Zhen, Zhu, Jun, Hoye, Robert L Z, Zhou, Ru
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Sprache:eng
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