High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss
The main results of the studies on designing high-power semiconductor laser diodes based on asymmetric semiconductor heterostructures InGaAs(P)/Al(In)GaAs(P)/GaAs with low internal optical loss, whose concept was proposed at the Ioffe Institute, are described in detail. The basic technological appro...
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| Veröffentlicht in: | Bulletin of the Lebedev Physics Institute 2023-09, Vol.50 (Suppl 4), p.S494-S512 |
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| container_end_page | S512 |
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| container_issue | Suppl 4 |
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| container_title | Bulletin of the Lebedev Physics Institute |
| container_volume | 50 |
| creator | Slipchenko, S. O. Veselov, D. A. Zolotarev, V. V. Lyutetskii, A. V. Podoskin, A. A. Sokolova, Z. N. Shamakhov, V. V. Shashkin, I. S. Kop’ev, P. S. Pikhtin, N. A. |
| description | The main results of the studies on designing high-power semiconductor laser diodes based on asymmetric semiconductor heterostructures InGaAs(P)/Al(In)GaAs(P)/GaAs with low internal optical loss, whose concept was proposed at the Ioffe Institute, are described in detail. The basic technological approaches to designing highly strained active laser media for the spectral range up to 1100 nm are considered. The results of studying the cw high-power multimode semiconductor lasers, emitting in the wavelength ranges of 780–850, 900–980, and 1000–1100 nm; high-power pulsed semiconductor lasers; and high-power lasers with a very wide emitting aperture are considered. The key factors, determining the saturation of the output optical power of high-power semiconductor lasers, are determined. |
| doi_str_mv | 10.3103/S1068335623160108 |
| format | Article |
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O. ; Veselov, D. A. ; Zolotarev, V. V. ; Lyutetskii, A. V. ; Podoskin, A. A. ; Sokolova, Z. N. ; Shamakhov, V. V. ; Shashkin, I. S. ; Kop’ev, P. S. ; Pikhtin, N. A.</creator><creatorcontrib>Slipchenko, S. O. ; Veselov, D. A. ; Zolotarev, V. V. ; Lyutetskii, A. V. ; Podoskin, A. A. ; Sokolova, Z. N. ; Shamakhov, V. V. ; Shashkin, I. S. ; Kop’ev, P. S. ; Pikhtin, N. A.</creatorcontrib><description>The main results of the studies on designing high-power semiconductor laser diodes based on asymmetric semiconductor heterostructures InGaAs(P)/Al(In)GaAs(P)/GaAs with low internal optical loss, whose concept was proposed at the Ioffe Institute, are described in detail. The basic technological approaches to designing highly strained active laser media for the spectral range up to 1100 nm are considered. The results of studying the cw high-power multimode semiconductor lasers, emitting in the wavelength ranges of 780–850, 900–980, and 1000–1100 nm; high-power pulsed semiconductor lasers; and high-power lasers with a very wide emitting aperture are considered. The key factors, determining the saturation of the output optical power of high-power semiconductor lasers, are determined.</description><identifier>ISSN: 1068-3356</identifier><identifier>EISSN: 1934-838X</identifier><identifier>DOI: 10.3103/S1068335623160108</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Heterostructures ; High power lasers ; Indium gallium arsenides ; Physics ; Physics and Astronomy ; Semiconductor lasers</subject><ispartof>Bulletin of the Lebedev Physics Institute, 2023-09, Vol.50 (Suppl 4), p.S494-S512</ispartof><rights>Allerton Press, Inc. 2023. 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Inst</stitle><date>2023-09-01</date><risdate>2023</risdate><volume>50</volume><issue>Suppl 4</issue><spage>S494</spage><epage>S512</epage><pages>S494-S512</pages><issn>1068-3356</issn><eissn>1934-838X</eissn><abstract>The main results of the studies on designing high-power semiconductor laser diodes based on asymmetric semiconductor heterostructures InGaAs(P)/Al(In)GaAs(P)/GaAs with low internal optical loss, whose concept was proposed at the Ioffe Institute, are described in detail. The basic technological approaches to designing highly strained active laser media for the spectral range up to 1100 nm are considered. The results of studying the cw high-power multimode semiconductor lasers, emitting in the wavelength ranges of 780–850, 900–980, and 1000–1100 nm; high-power pulsed semiconductor lasers; and high-power lasers with a very wide emitting aperture are considered. 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| subjects | Heterostructures High power lasers Indium gallium arsenides Physics Physics and Astronomy Semiconductor lasers |
| title | High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss |
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