Ab Initio Study of the Properties of Ti2PdFe(Ru)Sb2 Double Half-Heusler Semiconducting Alloys

Using ab initio calculations, we studied the structural, mechanical, electronic and thermoelectric properties of the new double half-Heusler alloys, Ti 2 PdFeSb 2 and Ti 2 PdRuSb 2 . Our calculations predict stable non-magnetic semiconducting phases with indirect bandgaps of 0.9 eV for Ti 2 PdFeSb 2...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of electronic materials 2023-10, Vol.52 (10), p.6514-6529
Hauptverfasser: Diaf, Mohamed, Righi, Haroun, Rached, Habib, Rached, Djamel, Beddiaf, Raouf
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 6529
container_issue 10
container_start_page 6514
container_title Journal of electronic materials
container_volume 52
creator Diaf, Mohamed
Righi, Haroun
Rached, Habib
Rached, Djamel
Beddiaf, Raouf
description Using ab initio calculations, we studied the structural, mechanical, electronic and thermoelectric properties of the new double half-Heusler alloys, Ti 2 PdFeSb 2 and Ti 2 PdRuSb 2 . Our calculations predict stable non-magnetic semiconducting phases with indirect bandgaps of 0.9 eV for Ti 2 PdFeSb 2 and 0.7 eV for Ti 2 PdRuSb 2 . The calculated formation energies and elastic constants suggest that both alloys are thermodynamically as well as mechanically stable. A detailed thermoelectric response ( S , κ e , PF, ZT) of the alloys was investigated using semi-classical Boltzmann transport theory as implemented in BoltzTraP2 code. The lattice thermal conductivity κ L was evaluated through the Slack model and shows a maximum value of 9.46Wm −1  K −1 for Ti 2 PdFeSb 2 and 7.22Wm −1  K −1 for Ti 2 PdFeSb 2 , at 900 K. The collected results suggest that both compounds would be potential candidates for thermoelectric applications.
doi_str_mv 10.1007/s11664-023-10589-2
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2859761684</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2859761684</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-15c05280ba45e097fbfe9db0e5400ea26e5e832745874505a05f8f0ad369e7b13</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKt_wFPAix6ik2STzR5LtbZQsNgKXiTsx2zdst3UZPfQf-_WCt48DMMM7wc8hFxzuOcA8UPgXOuIgZCMgzIJEydkwFXUn0a_n5IBSM2ZElKdk4sQNgBcccMH5GOU0VlTtZWjy7Yr9tSVtP1EuvBuh76tMBw-q0osignevnZ3y0zQR9dlNdJpWpdsil2o0dMlbqvcNUWXt1WzpqO6dvtwSc7KtA549buH5G3ytBpP2fzleTYezVkuedIyrnJQwkCWRgohicusxKTIAFUEgKnQqNBIEUfK9AMqBVWaEtJC6gTjjMshuTnm7rz76jC0duM63_SVVhiVxJprE_UqcVTl3oXgsbQ7X21Tv7cc7AGjPWK0PUb7g9GK3iSPptCLmzX6v-h_XN_D23PB</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2859761684</pqid></control><display><type>article</type><title>Ab Initio Study of the Properties of Ti2PdFe(Ru)Sb2 Double Half-Heusler Semiconducting Alloys</title><source>SpringerLink Journals - AutoHoldings</source><creator>Diaf, Mohamed ; Righi, Haroun ; Rached, Habib ; Rached, Djamel ; Beddiaf, Raouf</creator><creatorcontrib>Diaf, Mohamed ; Righi, Haroun ; Rached, Habib ; Rached, Djamel ; Beddiaf, Raouf</creatorcontrib><description>Using ab initio calculations, we studied the structural, mechanical, electronic and thermoelectric properties of the new double half-Heusler alloys, Ti 2 PdFeSb 2 and Ti 2 PdRuSb 2 . Our calculations predict stable non-magnetic semiconducting phases with indirect bandgaps of 0.9 eV for Ti 2 PdFeSb 2 and 0.7 eV for Ti 2 PdRuSb 2 . The calculated formation energies and elastic constants suggest that both alloys are thermodynamically as well as mechanically stable. A detailed thermoelectric response ( S , κ e , PF, ZT) of the alloys was investigated using semi-classical Boltzmann transport theory as implemented in BoltzTraP2 code. The lattice thermal conductivity κ L was evaluated through the Slack model and shows a maximum value of 9.46Wm −1  K −1 for Ti 2 PdFeSb 2 and 7.22Wm −1  K −1 for Ti 2 PdFeSb 2 , at 900 K. The collected results suggest that both compounds would be potential candidates for thermoelectric applications.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-023-10589-2</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Approximation ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Crystal structure ; Elastic properties ; Electric properties ; Electronics and Microelectronics ; Energy ; Free energy ; Heat conductivity ; Heat of formation ; Heusler alloys ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Original Research Article ; Solid State Physics ; Thermal conductivity ; Thermoelectricity ; Transport theory</subject><ispartof>Journal of electronic materials, 2023-10, Vol.52 (10), p.6514-6529</ispartof><rights>The Minerals, Metals &amp; Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-15c05280ba45e097fbfe9db0e5400ea26e5e832745874505a05f8f0ad369e7b13</citedby><cites>FETCH-LOGICAL-c319t-15c05280ba45e097fbfe9db0e5400ea26e5e832745874505a05f8f0ad369e7b13</cites><orcidid>0000-0002-5138-162X ; 0000-0003-3867-576X ; 0000-0003-4686-5686 ; 0000-0002-4885-5580 ; 0000-0003-4149-6375</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-023-10589-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-023-10589-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Diaf, Mohamed</creatorcontrib><creatorcontrib>Righi, Haroun</creatorcontrib><creatorcontrib>Rached, Habib</creatorcontrib><creatorcontrib>Rached, Djamel</creatorcontrib><creatorcontrib>Beddiaf, Raouf</creatorcontrib><title>Ab Initio Study of the Properties of Ti2PdFe(Ru)Sb2 Double Half-Heusler Semiconducting Alloys</title><title>Journal of electronic materials</title><addtitle>J. Electron. Mater</addtitle><description>Using ab initio calculations, we studied the structural, mechanical, electronic and thermoelectric properties of the new double half-Heusler alloys, Ti 2 PdFeSb 2 and Ti 2 PdRuSb 2 . Our calculations predict stable non-magnetic semiconducting phases with indirect bandgaps of 0.9 eV for Ti 2 PdFeSb 2 and 0.7 eV for Ti 2 PdRuSb 2 . The calculated formation energies and elastic constants suggest that both alloys are thermodynamically as well as mechanically stable. A detailed thermoelectric response ( S , κ e , PF, ZT) of the alloys was investigated using semi-classical Boltzmann transport theory as implemented in BoltzTraP2 code. The lattice thermal conductivity κ L was evaluated through the Slack model and shows a maximum value of 9.46Wm −1  K −1 for Ti 2 PdFeSb 2 and 7.22Wm −1  K −1 for Ti 2 PdFeSb 2 , at 900 K. The collected results suggest that both compounds would be potential candidates for thermoelectric applications.</description><subject>Approximation</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Crystal structure</subject><subject>Elastic properties</subject><subject>Electric properties</subject><subject>Electronics and Microelectronics</subject><subject>Energy</subject><subject>Free energy</subject><subject>Heat conductivity</subject><subject>Heat of formation</subject><subject>Heusler alloys</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Original Research Article</subject><subject>Solid State Physics</subject><subject>Thermal conductivity</subject><subject>Thermoelectricity</subject><subject>Transport theory</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9kE1LAzEQhoMoWKt_wFPAix6ik2STzR5LtbZQsNgKXiTsx2zdst3UZPfQf-_WCt48DMMM7wc8hFxzuOcA8UPgXOuIgZCMgzIJEydkwFXUn0a_n5IBSM2ZElKdk4sQNgBcccMH5GOU0VlTtZWjy7Yr9tSVtP1EuvBuh76tMBw-q0osignevnZ3y0zQR9dlNdJpWpdsil2o0dMlbqvcNUWXt1WzpqO6dvtwSc7KtA549buH5G3ytBpP2fzleTYezVkuedIyrnJQwkCWRgohicusxKTIAFUEgKnQqNBIEUfK9AMqBVWaEtJC6gTjjMshuTnm7rz76jC0duM63_SVVhiVxJprE_UqcVTl3oXgsbQ7X21Tv7cc7AGjPWK0PUb7g9GK3iSPptCLmzX6v-h_XN_D23PB</recordid><startdate>20231001</startdate><enddate>20231001</enddate><creator>Diaf, Mohamed</creator><creator>Righi, Haroun</creator><creator>Rached, Habib</creator><creator>Rached, Djamel</creator><creator>Beddiaf, Raouf</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0002-5138-162X</orcidid><orcidid>https://orcid.org/0000-0003-3867-576X</orcidid><orcidid>https://orcid.org/0000-0003-4686-5686</orcidid><orcidid>https://orcid.org/0000-0002-4885-5580</orcidid><orcidid>https://orcid.org/0000-0003-4149-6375</orcidid></search><sort><creationdate>20231001</creationdate><title>Ab Initio Study of the Properties of Ti2PdFe(Ru)Sb2 Double Half-Heusler Semiconducting Alloys</title><author>Diaf, Mohamed ; Righi, Haroun ; Rached, Habib ; Rached, Djamel ; Beddiaf, Raouf</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-15c05280ba45e097fbfe9db0e5400ea26e5e832745874505a05f8f0ad369e7b13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Approximation</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Crystal structure</topic><topic>Elastic properties</topic><topic>Electric properties</topic><topic>Electronics and Microelectronics</topic><topic>Energy</topic><topic>Free energy</topic><topic>Heat conductivity</topic><topic>Heat of formation</topic><topic>Heusler alloys</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Original Research Article</topic><topic>Solid State Physics</topic><topic>Thermal conductivity</topic><topic>Thermoelectricity</topic><topic>Transport theory</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Diaf, Mohamed</creatorcontrib><creatorcontrib>Righi, Haroun</creatorcontrib><creatorcontrib>Rached, Habib</creatorcontrib><creatorcontrib>Rached, Djamel</creatorcontrib><creatorcontrib>Beddiaf, Raouf</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies &amp; Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies &amp; Aerospace Database</collection><collection>ProQuest Advanced Technologies &amp; Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Diaf, Mohamed</au><au>Righi, Haroun</au><au>Rached, Habib</au><au>Rached, Djamel</au><au>Beddiaf, Raouf</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ab Initio Study of the Properties of Ti2PdFe(Ru)Sb2 Double Half-Heusler Semiconducting Alloys</atitle><jtitle>Journal of electronic materials</jtitle><stitle>J. Electron. Mater</stitle><date>2023-10-01</date><risdate>2023</risdate><volume>52</volume><issue>10</issue><spage>6514</spage><epage>6529</epage><pages>6514-6529</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>Using ab initio calculations, we studied the structural, mechanical, electronic and thermoelectric properties of the new double half-Heusler alloys, Ti 2 PdFeSb 2 and Ti 2 PdRuSb 2 . Our calculations predict stable non-magnetic semiconducting phases with indirect bandgaps of 0.9 eV for Ti 2 PdFeSb 2 and 0.7 eV for Ti 2 PdRuSb 2 . The calculated formation energies and elastic constants suggest that both alloys are thermodynamically as well as mechanically stable. A detailed thermoelectric response ( S , κ e , PF, ZT) of the alloys was investigated using semi-classical Boltzmann transport theory as implemented in BoltzTraP2 code. The lattice thermal conductivity κ L was evaluated through the Slack model and shows a maximum value of 9.46Wm −1  K −1 for Ti 2 PdFeSb 2 and 7.22Wm −1  K −1 for Ti 2 PdFeSb 2 , at 900 K. The collected results suggest that both compounds would be potential candidates for thermoelectric applications.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-023-10589-2</doi><tpages>16</tpages><orcidid>https://orcid.org/0000-0002-5138-162X</orcidid><orcidid>https://orcid.org/0000-0003-3867-576X</orcidid><orcidid>https://orcid.org/0000-0003-4686-5686</orcidid><orcidid>https://orcid.org/0000-0002-4885-5580</orcidid><orcidid>https://orcid.org/0000-0003-4149-6375</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0361-5235
ispartof Journal of electronic materials, 2023-10, Vol.52 (10), p.6514-6529
issn 0361-5235
1543-186X
language eng
recordid cdi_proquest_journals_2859761684
source SpringerLink Journals - AutoHoldings
subjects Approximation
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystal structure
Elastic properties
Electric properties
Electronics and Microelectronics
Energy
Free energy
Heat conductivity
Heat of formation
Heusler alloys
Instrumentation
Materials Science
Optical and Electronic Materials
Original Research Article
Solid State Physics
Thermal conductivity
Thermoelectricity
Transport theory
title Ab Initio Study of the Properties of Ti2PdFe(Ru)Sb2 Double Half-Heusler Semiconducting Alloys
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T23%3A58%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ab%20Initio%20Study%20of%20the%20Properties%20of%20Ti2PdFe(Ru)Sb2%20Double%20Half-Heusler%20Semiconducting%20Alloys&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=Diaf,%20Mohamed&rft.date=2023-10-01&rft.volume=52&rft.issue=10&rft.spage=6514&rft.epage=6529&rft.pages=6514-6529&rft.issn=0361-5235&rft.eissn=1543-186X&rft_id=info:doi/10.1007/s11664-023-10589-2&rft_dat=%3Cproquest_cross%3E2859761684%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2859761684&rft_id=info:pmid/&rfr_iscdi=true