Effect of Potassium Iodate-Based Slurry for Polishing of Ruthenium (Ru) as Advanced Interconnects
With the reduction of technology nodes to less than 10 nm, ruthenium (Ru) has emerged as a viable replacement for copper (Cu) for back-end-of-the-line (BEOL) interconnects. Good surface uniformity while maintaining an appropriate thickness of Ru is required during the fabrication process, which can...
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| Veröffentlicht in: | Journal of electronic materials 2023-10, Vol.52 (10), p.6551-6565 |
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| creator | Hazarika, Jenasree Talukdar, Anusuya Rajaraman, Prasanna Venkatesh |
| description | With the reduction of technology nodes to less than 10 nm, ruthenium (Ru) has emerged as a viable replacement for copper (Cu) for back-end-of-the-line (BEOL) interconnects. Good surface uniformity while maintaining an appropriate thickness of Ru is required during the fabrication process, which can be achieved by employing the chemical mechanical planarization (CMP) process. However, a crucial step in the CMP process is to attain reasonable removal rates of high-mechanical-strength and chemically inert metals such as Ru. Hence, this study investigates a competent CMP slurry comprising potassium iodate (KIO
3
) as an oxidizer and fumed silica as an abrasive for polishing Ru. The polishing results show that adding KIO
3
to fumed silica modifies the silica particles, thereby enhancing the removal rates of the metal. thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectroscopy (UV-Vis) characterization confirm the modification of the silica particles by KIO
3
as an oxidizer. The studies reveal that the abrasive concentration usage was reduced to 60% due to silica modification. The surface morphology of the treated metal surface was evaluated using field emission scanning electron microscopy (FESEM). No adsorbed contamination or pitting is observed on the metal surface. The inhibition effect of 1,2,3-benzotriazole (BTA) was investigated in detail by performing potentiodynamic polarization experiments. The nature of the metal dissolution in KIO
3
was investigated by examining the effect of solution temperature on the etch rates. The thermodynamic process of the system was found to be endothermic in nature, and the dissolution followed an associative mechanism. The results reported in this paper reveal that the proposed slurry can be used to significantly improve Ru polishing efficiency and provide desired selectivity without compromising the surface quality of the metal. |
| doi_str_mv | 10.1007/s11664-023-10585-6 |
| format | Article |
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3
) as an oxidizer and fumed silica as an abrasive for polishing Ru. The polishing results show that adding KIO
3
to fumed silica modifies the silica particles, thereby enhancing the removal rates of the metal. thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectroscopy (UV-Vis) characterization confirm the modification of the silica particles by KIO
3
as an oxidizer. The studies reveal that the abrasive concentration usage was reduced to 60% due to silica modification. The surface morphology of the treated metal surface was evaluated using field emission scanning electron microscopy (FESEM). No adsorbed contamination or pitting is observed on the metal surface. The inhibition effect of 1,2,3-benzotriazole (BTA) was investigated in detail by performing potentiodynamic polarization experiments. The nature of the metal dissolution in KIO
3
was investigated by examining the effect of solution temperature on the etch rates. The thermodynamic process of the system was found to be endothermic in nature, and the dissolution followed an associative mechanism. The results reported in this paper reveal that the proposed slurry can be used to significantly improve Ru polishing efficiency and provide desired selectivity without compromising the surface quality of the metal.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-023-10585-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Benzotriazole ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Copper ; Dissolution ; Electronics and Microelectronics ; Emission analysis ; Field emission microscopy ; Fourier transforms ; Infrared analysis ; Infrared spectroscopy ; Instrumentation ; Interconnections ; Materials Science ; Metal surfaces ; Optical and Electronic Materials ; Original Research Article ; Oxidizing agents ; Polishing ; Potassium ; Ruthenium ; Silica fume ; Silicones ; Slurries ; Solid State Physics ; Spectrum analysis ; Surface properties ; Thermogravimetric analysis</subject><ispartof>Journal of electronic materials, 2023-10, Vol.52 (10), p.6551-6565</ispartof><rights>The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c270t-549a7f799c39219dfa1e29c4fab77bc0a048837cf0b573d790536174637ed5d3</cites><orcidid>0000-0001-5497-1900 ; 0000-0003-4510-018X ; 0000-0002-2454-8340</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-023-10585-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-023-10585-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Hazarika, Jenasree</creatorcontrib><creatorcontrib>Talukdar, Anusuya</creatorcontrib><creatorcontrib>Rajaraman, Prasanna Venkatesh</creatorcontrib><title>Effect of Potassium Iodate-Based Slurry for Polishing of Ruthenium (Ru) as Advanced Interconnects</title><title>Journal of electronic materials</title><addtitle>J. Electron. Mater</addtitle><description>With the reduction of technology nodes to less than 10 nm, ruthenium (Ru) has emerged as a viable replacement for copper (Cu) for back-end-of-the-line (BEOL) interconnects. Good surface uniformity while maintaining an appropriate thickness of Ru is required during the fabrication process, which can be achieved by employing the chemical mechanical planarization (CMP) process. However, a crucial step in the CMP process is to attain reasonable removal rates of high-mechanical-strength and chemically inert metals such as Ru. Hence, this study investigates a competent CMP slurry comprising potassium iodate (KIO
3
) as an oxidizer and fumed silica as an abrasive for polishing Ru. The polishing results show that adding KIO
3
to fumed silica modifies the silica particles, thereby enhancing the removal rates of the metal. thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectroscopy (UV-Vis) characterization confirm the modification of the silica particles by KIO
3
as an oxidizer. The studies reveal that the abrasive concentration usage was reduced to 60% due to silica modification. The surface morphology of the treated metal surface was evaluated using field emission scanning electron microscopy (FESEM). No adsorbed contamination or pitting is observed on the metal surface. The inhibition effect of 1,2,3-benzotriazole (BTA) was investigated in detail by performing potentiodynamic polarization experiments. The nature of the metal dissolution in KIO
3
was investigated by examining the effect of solution temperature on the etch rates. The thermodynamic process of the system was found to be endothermic in nature, and the dissolution followed an associative mechanism. The results reported in this paper reveal that the proposed slurry can be used to significantly improve Ru polishing efficiency and provide desired selectivity without compromising the surface quality of the metal.</description><subject>Benzotriazole</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Copper</subject><subject>Dissolution</subject><subject>Electronics and Microelectronics</subject><subject>Emission analysis</subject><subject>Field emission microscopy</subject><subject>Fourier transforms</subject><subject>Infrared analysis</subject><subject>Infrared spectroscopy</subject><subject>Instrumentation</subject><subject>Interconnections</subject><subject>Materials Science</subject><subject>Metal surfaces</subject><subject>Optical and Electronic Materials</subject><subject>Original Research Article</subject><subject>Oxidizing agents</subject><subject>Polishing</subject><subject>Potassium</subject><subject>Ruthenium</subject><subject>Silica fume</subject><subject>Silicones</subject><subject>Slurries</subject><subject>Solid State Physics</subject><subject>Spectrum analysis</subject><subject>Surface properties</subject><subject>Thermogravimetric analysis</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9kMFKAzEURYMoWKs_4GrAjS6iyWSSTJa1VC0UlNqFu5BmknZKm9QkI_TvTR3BnavHg3Pv4x0ArjG6xwjxh4gxYxVEJYEY0ZpCdgIGmFZ5rdnHKRggwjCkJaHn4CLGDUKY4hoPgJpYa3QqvC3efFIxtt2umPpGJQMfVTRN8b7tQjgU1odMbNu4bt3qiM-7tDbuiN_Ou7tCxWLUfCmnc2TqkgnaO5eb4yU4s2obzdXvHILF02QxfoGz1-fpeDSDuuQoQVoJxS0XQhNRYtFYhU0pdGXVkvOlRgpVdU24tmhJOWm4QDS_xCtGuGloQ4bgpq_dB__ZmZjkxnfB5YuyrKngLNvAmSp7SgcfYzBW7kO7U-EgMZJHk7I3KbNJ-WNSshwifShm2K1M-Kv-J_UNjah1wQ</recordid><startdate>20231001</startdate><enddate>20231001</enddate><creator>Hazarika, Jenasree</creator><creator>Talukdar, Anusuya</creator><creator>Rajaraman, Prasanna Venkatesh</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0001-5497-1900</orcidid><orcidid>https://orcid.org/0000-0003-4510-018X</orcidid><orcidid>https://orcid.org/0000-0002-2454-8340</orcidid></search><sort><creationdate>20231001</creationdate><title>Effect of Potassium Iodate-Based Slurry for Polishing of Ruthenium (Ru) as Advanced Interconnects</title><author>Hazarika, Jenasree ; Talukdar, Anusuya ; Rajaraman, Prasanna Venkatesh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-549a7f799c39219dfa1e29c4fab77bc0a048837cf0b573d790536174637ed5d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Benzotriazole</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Copper</topic><topic>Dissolution</topic><topic>Electronics and Microelectronics</topic><topic>Emission analysis</topic><topic>Field emission microscopy</topic><topic>Fourier transforms</topic><topic>Infrared analysis</topic><topic>Infrared spectroscopy</topic><topic>Instrumentation</topic><topic>Interconnections</topic><topic>Materials Science</topic><topic>Metal surfaces</topic><topic>Optical and Electronic Materials</topic><topic>Original Research Article</topic><topic>Oxidizing agents</topic><topic>Polishing</topic><topic>Potassium</topic><topic>Ruthenium</topic><topic>Silica fume</topic><topic>Silicones</topic><topic>Slurries</topic><topic>Solid State Physics</topic><topic>Spectrum analysis</topic><topic>Surface properties</topic><topic>Thermogravimetric analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hazarika, Jenasree</creatorcontrib><creatorcontrib>Talukdar, Anusuya</creatorcontrib><creatorcontrib>Rajaraman, Prasanna Venkatesh</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hazarika, Jenasree</au><au>Talukdar, Anusuya</au><au>Rajaraman, Prasanna Venkatesh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Potassium Iodate-Based Slurry for Polishing of Ruthenium (Ru) as Advanced Interconnects</atitle><jtitle>Journal of electronic materials</jtitle><stitle>J. Electron. Mater</stitle><date>2023-10-01</date><risdate>2023</risdate><volume>52</volume><issue>10</issue><spage>6551</spage><epage>6565</epage><pages>6551-6565</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>With the reduction of technology nodes to less than 10 nm, ruthenium (Ru) has emerged as a viable replacement for copper (Cu) for back-end-of-the-line (BEOL) interconnects. Good surface uniformity while maintaining an appropriate thickness of Ru is required during the fabrication process, which can be achieved by employing the chemical mechanical planarization (CMP) process. However, a crucial step in the CMP process is to attain reasonable removal rates of high-mechanical-strength and chemically inert metals such as Ru. Hence, this study investigates a competent CMP slurry comprising potassium iodate (KIO
3
) as an oxidizer and fumed silica as an abrasive for polishing Ru. The polishing results show that adding KIO
3
to fumed silica modifies the silica particles, thereby enhancing the removal rates of the metal. thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectroscopy (UV-Vis) characterization confirm the modification of the silica particles by KIO
3
as an oxidizer. The studies reveal that the abrasive concentration usage was reduced to 60% due to silica modification. The surface morphology of the treated metal surface was evaluated using field emission scanning electron microscopy (FESEM). No adsorbed contamination or pitting is observed on the metal surface. The inhibition effect of 1,2,3-benzotriazole (BTA) was investigated in detail by performing potentiodynamic polarization experiments. The nature of the metal dissolution in KIO
3
was investigated by examining the effect of solution temperature on the etch rates. The thermodynamic process of the system was found to be endothermic in nature, and the dissolution followed an associative mechanism. The results reported in this paper reveal that the proposed slurry can be used to significantly improve Ru polishing efficiency and provide desired selectivity without compromising the surface quality of the metal.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-023-10585-6</doi><tpages>15</tpages><orcidid>https://orcid.org/0000-0001-5497-1900</orcidid><orcidid>https://orcid.org/0000-0003-4510-018X</orcidid><orcidid>https://orcid.org/0000-0002-2454-8340</orcidid></addata></record> |
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| subjects | Benzotriazole Characterization and Evaluation of Materials Chemistry and Materials Science Copper Dissolution Electronics and Microelectronics Emission analysis Field emission microscopy Fourier transforms Infrared analysis Infrared spectroscopy Instrumentation Interconnections Materials Science Metal surfaces Optical and Electronic Materials Original Research Article Oxidizing agents Polishing Potassium Ruthenium Silica fume Silicones Slurries Solid State Physics Spectrum analysis Surface properties Thermogravimetric analysis |
| title | Effect of Potassium Iodate-Based Slurry for Polishing of Ruthenium (Ru) as Advanced Interconnects |
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