Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity
The MSM structures based on high-quality 1.6 μm in thick α-Ga 2 O 3 films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum efficiency and detecti...
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| Veröffentlicht in: | IEEE sensors journal 2023-09, Vol.23 (17), p.1-1 |
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| creator | Almaev, Aleksei Nikolaev, Vladimir Kopyev, Viktor Shapenkov, Sevastian Yakovlev, Nikita Kushnarev, Bogdan Pechnikov, Aleksei Deng, Jinxiang Izaak, Tatyana Chikiryaka, Andrei Scheglov, Mikhail Zarichny, Anton |
| description | The MSM structures based on high-quality 1.6 μm in thick α-Ga 2 O 3 films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum efficiency and detectivity of MSM structures based on α-Ga 2 O 3 were studied in the wavelength range of 205-260 nm. The responsivity, the external quantum efficiency and the detectivity are 7.19×10 4 A×W -1 , 3.79×10 5 arb.un. and 1.12×10 18 Hz 0.5 ×cm×W -1 , respectively, for structures with an interelectrode distance of 30 μm at an applied voltage of 10 V and exposure to radiation with a wavelength of 235 nm. The high values of the photoelectric characteristics were caused by the manifestation of an internal gain of the photoresponse due to the self-localization of holes in α-Ga 2 O 3 . The prospects of researches to develop UVC radiation detectors for wireless UVC communication were shown. |
| doi_str_mv | 10.1109/JSEN.2023.3297127 |
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The spectral dependences of responsivity, external quantum efficiency and detectivity of MSM structures based on α-Ga 2 O 3 were studied in the wavelength range of 205-260 nm. The responsivity, the external quantum efficiency and the detectivity are 7.19×10 4 A×W -1 , 3.79×10 5 arb.un. and 1.12×10 18 Hz 0.5 ×cm×W -1 , respectively, for structures with an interelectrode distance of 30 μm at an applied voltage of 10 V and exposure to radiation with a wavelength of 235 nm. The high values of the photoelectric characteristics were caused by the manifestation of an internal gain of the photoresponse due to the self-localization of holes in α-Ga 2 O 3 . 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| subjects | Detectors Epitaxial growth Gallium Gallium oxides halide vapor phase epitaxy Ocean temperature Photoelectricity Quantum efficiency Radiation Radiation detectors Radiation effects Sea measurements Sensors Short wave radiation solar-blind ultraviolet detectors Ultraviolet detectors Ultraviolet radiation Vapor phase epitaxy Vapor phases Wireless communications α-Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3 |
| title | Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity |
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