Characterisation of interface states of Al/p-Si Schottky diode by current–voltage and capacitance–voltage–frequency measurements

In this study, the fabricated Al/ p -Si Schottky diode is characterised at room temperature using current–voltage ( I–V ) and capacitance–voltage–frequency ( C–V–f ) techniques. The energy distribution profile of the diode’s interface state density is generated using different diode parameters. In t...

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