Optical confinement enhancement of AlGaN-based deep-ultraviolet laser diode by using asymmetrically wide waveguide layers
The performance of AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) was investigated by varying the thickness of the upper and lower waveguide (WG) layers. The results show that (1) the asymmetric wide WG layers structure with thick upper and thin lower WG layer can effectively reduce the optic...
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| Veröffentlicht in: | Applied physics. B, Lasers and optics Lasers and optics, 2023-09, Vol.129 (9), Article 145 |
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| container_title | Applied physics. B, Lasers and optics |
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| creator | Xu, Yuan Jia, Liya Liu, Linfu Sang, Xien Wang, Fang Liou, Juin. J. Liu, Yuhuai |
| description | The performance of AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) was investigated by varying the thickness of the upper and lower waveguide (WG) layers. The results show that (1) the asymmetric wide WG layers structure with thick upper and thin lower WG layer can effectively reduce the optical field leakage in the active region and increase the optical confinement factor (OCF) by 31.66% compared to the traditional symmetric wide WG layers structure. (2) The asymmetric wide WG layers improve the stimulated recombination rate, and electro-optical conversion efficiency, increasing the slope efficiency (SE) of the LD to 1.69 W/A at a lower threshold current (Ith) of 30.46 mA. (3) The asymmetric wide WG layers limit the carrier loss, which is due to the improvement of the energy band variation. |
| doi_str_mv | 10.1007/s00340-023-08088-7 |
| format | Article |
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B</stitle><date>2023-09-01</date><risdate>2023</risdate><volume>129</volume><issue>9</issue><artnum>145</artnum><issn>0946-2171</issn><eissn>1432-0649</eissn><abstract>The performance of AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) was investigated by varying the thickness of the upper and lower waveguide (WG) layers. The results show that (1) the asymmetric wide WG layers structure with thick upper and thin lower WG layer can effectively reduce the optical field leakage in the active region and increase the optical confinement factor (OCF) by 31.66% compared to the traditional symmetric wide WG layers structure. (2) The asymmetric wide WG layers improve the stimulated recombination rate, and electro-optical conversion efficiency, increasing the slope efficiency (SE) of the LD to 1.69 W/A at a lower threshold current (Ith) of 30.46 mA. 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| subjects | Applied physics Asymmetry Confinement Energy bands Engineering Lasers Optical Devices Optics Photonics Physical Chemistry Physics Physics and Astronomy Quantum Optics Semiconductor lasers Threshold currents Ultraviolet lasers Waveguides |
| title | Optical confinement enhancement of AlGaN-based deep-ultraviolet laser diode by using asymmetrically wide waveguide layers |
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