Electro-static properties of GaAs based two-dimensional bilayer systems

This work investigates electro-static potential and electron density distributions of a bilayer system. In calculations, a self-consistent numerical method is used to solve the three-dimensional Poisson equation. Firstly, an experimental heterostructure is defined to generate the wafer configuration. Secondly, the distance between the two electron gas layers was varied. It is observed that at the tunneling limit of separation ( ∼ nm), the spatial distribution of electrons is significantly different. Following step, the effects of the metallic gate defined on the heterostructure and the potential vary applied to this metallic gate on the spatial distribution of electrons were investigated.The calculations represent that the bottom layer is unaffected for the voltage values applied to the metallic gate. At a particular gate voltage value, the top layer is completely depleted. In the locally depleted electron regions in the top layer, the electrons in the corresponding regions in the bottom layer are affected by the gate potential. This study provides significant results and therefore will be leading for current and future studies.