Analysis of Mechanical Strain in AlGaN/GaN HFETs

Herein, the influence of mechanical strain induced by passivation layers on the electrical performance of AlGaN/GaN heterostructure field‐effect transistor is investigated. We studied the physical mechanism of a threshold voltage (Vth) shift for the monolithically fabricated on/off devices reported...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2023-08, Vol.220 (16), p.n/a
Hauptverfasser:	Yazdani, Hossein, Graff, Andreas, Simon-Najasek, Michél, Altmann, Frank, Brunner, Frank, Ostermay, Ina, Chevtchenko, Serguei, Würfl, Joachim
Format:	Artikel
Sprache:	eng
Schlagworte:	2D electrons gas (2DEG) Aluminum gallium nitrides Electron diffraction Electrons Epitaxial layers Gallium nitrides GaN High-electron-mobility transistor Heterostructures nano-beam electron diffraction (NBED) Passivity Piezoelectricity scanning transmission electron microscopy (STEM) Strain distribution strain engineering Threshold voltage Transistors
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