Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxid...

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Veröffentlicht in:	arXiv.org 2023-08
Hauptverfasser:	Zhou, Jie, Dheenan, Ashok, Gong, Jiarui, Adamo, Carolina, Marshall, Patrick, Sheikhi, Moheb, Tsung-Han Tsai, Wriedt, Nathan, Cheung, Clincy, Qiu, Shuoyang, Tien Khee Ng, Gan, Qiaoqiang, Gambin, Vincent, Ooi, Boon S, Rajan, Siddharth, Ma, Zhenqiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Beta phase Gallium arsenide phosphide Gallium oxides Heterojunctions Junction diodes P-n junctions Substrates Transfer printing
Online-Zugang:	Volltext
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