Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxid...
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| creator | Zhou, Jie Dheenan, Ashok Gong, Jiarui Adamo, Carolina Marshall, Patrick Sheikhi, Moheb Tsung-Han Tsai Wriedt, Nathan Cheung, Clincy Qiu, Shuoyang Tien Khee Ng Gan, Qiaoqiang Gambin, Vincent Ooi, Boon S Rajan, Siddharth Ma, Zhenqiang |
| description | Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga\(_2\)O\(_3\) epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V. |
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By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga\(_2\)O\(_3\) epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V.</description><subject>Aluminum gallium arsenides</subject><subject>Beta phase</subject><subject>Gallium arsenide phosphide</subject><subject>Gallium oxides</subject><subject>Heterojunctions</subject><subject>Junction diodes</subject><subject>P-n junctions</subject><subject>Substrates</subject><subject>Transfer printing</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNi8sKwjAURIMgWLT_EHAdaJOmrcsivhaiC_cltbfYEm9qHv9vC36Am5kDc2ZBIi5EysqM8xWJnRuSJOF5waUUEblesPe90rSFt0HnrfK9QWo6WumTqhyb484a8GpCfhMU2ciQtiY0GugLPFgzBHzON7chy05pB_Gv12R7PDz2ZzZa8wngfD2YYHGaal7KNCt2eVmI_6wvAdU84w</recordid><startdate>20230815</startdate><enddate>20230815</enddate><creator>Zhou, Jie</creator><creator>Dheenan, Ashok</creator><creator>Gong, Jiarui</creator><creator>Adamo, Carolina</creator><creator>Marshall, Patrick</creator><creator>Sheikhi, Moheb</creator><creator>Tsung-Han Tsai</creator><creator>Wriedt, Nathan</creator><creator>Cheung, Clincy</creator><creator>Qiu, Shuoyang</creator><creator>Tien Khee Ng</creator><creator>Gan, Qiaoqiang</creator><creator>Gambin, Vincent</creator><creator>Ooi, Boon S</creator><creator>Rajan, Siddharth</creator><creator>Ma, Zhenqiang</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope></search><sort><creationdate>20230815</creationdate><title>Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions</title><author>Zhou, Jie ; 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| identifier | EISSN: 2331-8422 |
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| subjects | Aluminum gallium arsenides Beta phase Gallium arsenide phosphide Gallium oxides Heterojunctions Junction diodes P-n junctions Substrates Transfer printing |
| title | Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions |
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