Enhanced breakdown strength and energy storage density of PMMA/PVDF blends by coating superficial layers and doping organic fillers

Polymer-based flexible dielectrics have been widely used in capacitor energy storage due to their advantages of ultrahigh power density, flexibility, and scalability. To develop the polymer dielectric films with high-energy storage density has been a hot topic in the domain of dielectric energy stor...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2023-08, Vol.34 (23), p.1657, Article 1657
Hauptverfasser: Zhang, Changhai, Wang, Hairui, Liu, Zeyang, Zhang, Tiandong, Tang, Chao, Liu, Xianli, Chi, Qingguo
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container_issue 23
container_start_page 1657
container_title Journal of materials science. Materials in electronics
container_volume 34
creator Zhang, Changhai
Wang, Hairui
Liu, Zeyang
Zhang, Tiandong
Tang, Chao
Liu, Xianli
Chi, Qingguo
description Polymer-based flexible dielectrics have been widely used in capacitor energy storage due to their advantages of ultrahigh power density, flexibility, and scalability. To develop the polymer dielectric films with high-energy storage density has been a hot topic in the domain of dielectric energy storage. In this study, both of electric breakdown strength and energy storage density of poly(methyl methacrylate)/poly(vinylidene fluoride) (PMMA/PVDF) blending films are significantly improved by coating superficial layers and doping organic fillers, which involves using organic molecular semiconductor [6,6]phenyl C61 butyrate methyl ester (PCBM) as fillers doped into PMMA/PVDF (PMMA/PVDF@PCBM), and growing boron nitride (BN) barrier layer on the surface of the PMMA/PVDF@PCBM film (BN-PMMA/PVDF@PCBM-BN). The increased potential barrier height at the BN inorganic layer/metal electrode interface can remarkably suppress charge injection from electrodes. Additionally, the formation of charge traps at the interfaces of PCBM fillers and PVDF/PMMA matrix can significantly limit charge migration. An ultrahigh breakdown field strength of 889.6 kV/mm is achieved in the BN-PMMA/PVDF@0.7wt%PCBM-BN film, which also delivers a maximum discharged energy density of 25.62 J/cm 3 . This work provides an efficient method to enhance energy storage performance of polymer dielectric films by coating superficial layers and doping organic fillers.
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To develop the polymer dielectric films with high-energy storage density has been a hot topic in the domain of dielectric energy storage. In this study, both of electric breakdown strength and energy storage density of poly(methyl methacrylate)/poly(vinylidene fluoride) (PMMA/PVDF) blending films are significantly improved by coating superficial layers and doping organic fillers, which involves using organic molecular semiconductor [6,6]phenyl C61 butyrate methyl ester (PCBM) as fillers doped into PMMA/PVDF (PMMA/PVDF@PCBM), and growing boron nitride (BN) barrier layer on the surface of the PMMA/PVDF@PCBM film (BN-PMMA/PVDF@PCBM-BN). The increased potential barrier height at the BN inorganic layer/metal electrode interface can remarkably suppress charge injection from electrodes. Additionally, the formation of charge traps at the interfaces of PCBM fillers and PVDF/PMMA matrix can significantly limit charge migration. An ultrahigh breakdown field strength of 889.6 kV/mm is achieved in the BN-PMMA/PVDF@0.7wt%PCBM-BN film, which also delivers a maximum discharged energy density of 25.62 J/cm 3 . 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Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Polymer-based flexible dielectrics have been widely used in capacitor energy storage due to their advantages of ultrahigh power density, flexibility, and scalability. To develop the polymer dielectric films with high-energy storage density has been a hot topic in the domain of dielectric energy storage. In this study, both of electric breakdown strength and energy storage density of poly(methyl methacrylate)/poly(vinylidene fluoride) (PMMA/PVDF) blending films are significantly improved by coating superficial layers and doping organic fillers, which involves using organic molecular semiconductor [6,6]phenyl C61 butyrate methyl ester (PCBM) as fillers doped into PMMA/PVDF (PMMA/PVDF@PCBM), and growing boron nitride (BN) barrier layer on the surface of the PMMA/PVDF@PCBM film (BN-PMMA/PVDF@PCBM-BN). 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An ultrahigh breakdown field strength of 889.6 kV/mm is achieved in the BN-PMMA/PVDF@0.7wt%PCBM-BN film, which also delivers a maximum discharged energy density of 25.62 J/cm 3 . This work provides an efficient method to enhance energy storage performance of polymer dielectric films by coating superficial layers and doping organic fillers.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-023-11070-w</doi><orcidid>https://orcid.org/0000-0002-7124-9570</orcidid></addata></record>
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subjects Barrier layers
Boron nitride
Breakdown
Characterization and Evaluation of Materials
Charge injection
Chemistry and Materials Science
Coating
Dielectric strength
Doping
Electrodes
Energy storage
Field strength
Fillers
Materials Science
Optical and Electronic Materials
Organic chemistry
Polymer blends
Polymer films
Polymers
Polymethyl methacrylate
Polyvinylidene fluorides
Vinylidene fluoride
title Enhanced breakdown strength and energy storage density of PMMA/PVDF blends by coating superficial layers and doping organic fillers
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