Contacts for SiC Nano-Microwatt Energy Converters

The aim of the study is to consider the features of the physico–chemical processes in the near-contact region of the semiconductor SiC phase doped with radionuclide by solid-phase diffusion of C atoms, generation of nonequilibrium carriers and the semiconductor phase distinctive characteristic features. The DFT approach in this paper is aimed at obtaining evidence of the vacancy mechanism of diffusion during the formation of the SiC phase in the Si wafer. Radionuclide and silicon atoms counter-diffuse through a growing layer of silicon carbide, forming layers by solid-phase chemical transformation of silicon of - or -type conductivity into heterostructures of anisotypic or isotypic type of conductivity relative to the SiC phase, with superstecheometric alloying with conservation of the valence and the type of impurity conductivity, forming, depending on the phase, effects energetically manifested as the effect of ‘‘the inner sun,’’ which is the source of electrons and electron–hole pairs at ionization losses. This is due to interactions with the electrons of the shells of neighboring atoms, leading to the formation of electrons and holes in the region of spatial charge and carrying by built-in electric fields. The purpose of the study is due to an increase in the efficiency of separation of electron–hole pairs.