3.3: Higher External Quantum Efficiency with Lower Current Density Injection of <10 μm Pixel Size Arrays for Display Application

In this paper, the gallium nitride (GaN) based Micro‐LED was fabricated based on a self‐aligned process with hydroxide treatment and ALD passivation from 100 μm down to 3 μm. The different current spreading performance was characterized based on the series resistance analysis. Then the size‐dependen...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2023-04, Vol.54 (S1), p.41-44
Hauptverfasser:	Liu, Yibo, Zhanghu, Mengyuan, Feng, Feng, Li, Zichun, Chan, Ka-Wah, Kwok, Hoi Sing, Liu, Zhaojun
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays capacitance-voltage characterization Carrier density Carrier injection Current density display arrays external quantum efficiency Gallium nitrides GaN-based Micro-LEDs Quantum efficiency series resistance
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