11.2: The Effect of Doping Distribution on the Property of Green Phosphorescent Organic Light‐Emitting Diodes

In mass production OLED structures, doping ratio distribution across the thickness of emitting layer is not uniform owing to the linear evaporating configuration, where dopant and host materials are added in different sources. In this study, we firstly confirmed that different types of doping distri...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2023-04, Vol.54 (S1), p.104-109
Hauptverfasser: Liu, Bin, Li, Mengzhen, Yao, Chunliang, Cai, Minghan, Li, Guomeng, Wang, Hongyu, Gao, Xiaoyu, Zhu, Xiujian, Song, Wonjun
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container_end_page 109
container_issue S1
container_start_page 104
container_title SID International Symposium Digest of technical papers
container_volume 54
creator Liu, Bin
Li, Mengzhen
Yao, Chunliang
Cai, Minghan
Li, Guomeng
Wang, Hongyu
Gao, Xiaoyu
Zhu, Xiujian
Song, Wonjun
description In mass production OLED structures, doping ratio distribution across the thickness of emitting layer is not uniform owing to the linear evaporating configuration, where dopant and host materials are added in different sources. In this study, we firstly confirmed that different types of doping distribution among emitting layer of green phosphorescent OLED exhibited over 15% difference of current efficiency. By carefully designing and comparing emitting layers with a series of doping distribution modes, we found that dramatic variation of doping ratio near electron blocking layer was the critical factor. Then, trapping behavior of dopant molecules was confirmed to affect the carrier distribution among the emitting layer according to analysis of current density‐voltage (JV) and capacitance‐voltage (CV) curves from carrier only devices based on two types of doping distribution modes. Combining with the result of hole‐electron recombination zone (RZ), the area where possessed both high doping ratio and excitons recombination probability exhibited a high current efficiency and low driving voltage. Finally, PL and EL transient decay lifetime combined with triplet‐polaron quenching (TPQ) efficiency measurement demonstrated that TPQ was the main factor causing current efficiency difference between two types of doping distribution modes. Therefore, the doping distribution and trapping property of dopant material in emission layer should be carefully evaluated for OLED devices for mass production.
doi_str_mv 10.1002/sdtp.16233
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Finally, PL and EL transient decay lifetime combined with triplet‐polaron quenching (TPQ) efficiency measurement demonstrated that TPQ was the main factor causing current efficiency difference between two types of doping distribution modes. 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Finally, PL and EL transient decay lifetime combined with triplet‐polaron quenching (TPQ) efficiency measurement demonstrated that TPQ was the main factor causing current efficiency difference between two types of doping distribution modes. 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subjects AMOLED
Current efficiency
Dopants
Doping
doping distribution
Efficiency
Electric potential
Electron recombination
Emission analysis
Excitons
Mass production
Organic light emitting diodes
Phosphorescence
Thickness
Trapping
triplet‐polaron quenching
Voltage
title 11.2: The Effect of Doping Distribution on the Property of Green Phosphorescent Organic Light‐Emitting Diodes
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