A-site stoichiometry and piezoelectric response in thin film PbZr1−xTixO3

Lead zirconate titanate (PZT) films with Zr/Ti ratios of 52/48 and 30/70 annealed at varying partial pressures of PbO within the perovskite phase field exhibited permittivities of 1150 and 600, respectively, with loss tangents of 0.02. Many of the functional properties, including the permittivity, p...

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Veröffentlicht in:Journal of applied physics 2015-05, Vol.117 (20), p.204104
Hauptverfasser: Marincel, D. M., Jesse, S., Belianinov, A., Okatan, M. B., Kalinin, S. V., Jackson, T. N., Randall, C. A., Trolier-McKinstry, S.
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container_end_page
container_issue 20
container_start_page 204104
container_title Journal of applied physics
container_volume 117
creator Marincel, D. M.
Jesse, S.
Belianinov, A.
Okatan, M. B.
Kalinin, S. V.
Jackson, T. N.
Randall, C. A.
Trolier-McKinstry, S.
description Lead zirconate titanate (PZT) films with Zr/Ti ratios of 52/48 and 30/70 annealed at varying partial pressures of PbO within the perovskite phase field exhibited permittivities of 1150 and 600, respectively, with loss tangents of 0.02. Many of the functional properties, including the permittivity, piezoelectricity as indicated via the Rayleigh coefficients, and the aging rates were found to be weakly dependent of the lead content in the single phase field. Minor polarization–electric field hysteresis loops and piezoelectric coefficient e31,f values after a hot poling process suggest that the point defect helps stabilize the aligned domain states. Measurements of the local nonlinear response show an increased low response cluster size with decreasing PbO content, indicating that PbO deficiency acts to reduce domain wall motion where it is already low.
doi_str_mv 10.1063/1.4921869
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source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Domain walls
Furnaces
Hysteresis loops
Lead
Lead oxides
Lead zirconate titanate
MATERIALS SCIENCE
Nonlinear response
Piezoelectricity
Point defects
Polarization
Stoichiometry
Tangents
Zirconium
title A-site stoichiometry and piezoelectric response in thin film PbZr1−xTixO3
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