In-plane ferroelectric monolayer TlNbX4O and its application in bulk photovoltaic effect
A bulk photovoltaic effect (BPVE) in materials without inversion symmetry attracts increasing interest for high-efficiency solar cells beyond the p–n junction paradigm. Herein, we report the photovoltaic effect in an experimentally feasible TlNbX4O monolayer (TlNbX4O-ML, X = Cl, Br, I) with a large...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2023-07, Vol.123 (5) |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A bulk photovoltaic effect (BPVE) in materials without inversion symmetry attracts increasing interest for high-efficiency solar cells beyond the p–n junction paradigm. Herein, we report the photovoltaic effect in an experimentally feasible TlNbX4O monolayer (TlNbX4O-ML, X = Cl, Br, I) with a large ferroelectric polarization. Using first-principles calculations, we demonstrate that TlNbX4O-MLs are ferroelectric semiconductors with moderate switching barriers and higher spontaneous polarizations. Furthermore, we observe fairly giant shift current with the values of 109.6 μA/V2 for TlNbCl4O, 60 μA/V2 for TlNbBr4O, and 56.1 μA/V2 for TlNbI4O. These results unveil distinct features of the BPVE and the potential application of two-dimensional ferroelectric materials for next-generation photovoltaic devices. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0156495 |