Ultrasensitive and High-Speed Ga2O3 Solar-Blind Photodetection Based on Defect Engineering

Oxygen vacancy (VO) defects are ubiquitous in oxide semiconductors and usually served as charge carriers recombination centers to depress the device performance. Herein, a surface VO defect compensation engineering is conducted to modulate the VO and improve the device performance of [Formula Omitte...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-08, Vol.70 (8), p.4236
Hauptverfasser:	Xue-Qiang Ji, Ming-Yu, Liu, Zu-Yong, Yan, Li, Shan, Liu, Zeng, Xiao-Hui, Qi, Jian-Ying, Yuan, Jin-Jin, Wang, Yuan-Chun, Zhao, Wei-Hua, Tang, Pei-Gang, Li
Format:	Artikel
Sprache:	eng
Schlagworte:	Current carriers Dark current Decay rate Defects Gallium oxides Oxygen plasma Photoelectricity Plasma
Online-Zugang:	Volltext
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