Study on the Point‐Contact Gate AlGaN/GaN High Electron Mobility Transistor with 0.1 μm Gate Length

The current collapse has been one of the most challenging problems in AlGaN/GaN high electron mobility transistors (HEMTs). In recent years, the virtual gate effect has been the most widely accepted cause of the current collapse effect. To effectively improve the current collapse effect and reduce t...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2023-07, Vol.220 (14), p.n/a
Hauptverfasser:	Luo, Shengting, Liu, Xianyun, Jiang, Xingfang
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Breakdown current collapse effect Electric potential Gallium nitrides High electron mobility transistors point-contact gate Semiconductor devices Transconductance virtual gate effect Voltage
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