No‐Heating Deposition of Ferroelectric x%YO1.5–(100−x%)(Hf1−yZry)O2 Films

The no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 (x = 0−0.09, y = 0, 0.25, 0.50, and 1) is achieved using a radio‐frequency magnetron sputtering method. To investigate the crystal structure and ferroelectric properties, epitaxial films are grown on (111)‐oriented indium tin oxide (ITO)/(111...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2023-07, Vol.220 (14), p.n/a
Hauptverfasser:	Mimura, Takanori, Shimura, Reijiro, Tateyama, Akinori, Nakamura, Yoshiko, Shiraishi, Takahisa, Funakubo, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Coercivity Crystal structure Deposition Epitaxial growth ferroelectric film Ferroelectric materials Ferroelectricity Hafnium oxide Heating HfO2 Indium tin oxides Magnetic properties Magnetron sputtering no-heating deposition Orthorhombic phase Phase transitions Piezoelectricity sputtering method Substrates Thick films Yttria-stabilized zirconia Zirconium dioxide
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