Contribution from the Electronic States at Interfaces to Terahertz Photoconductivity in Structures Based on Hg1 –xCdxTe with an Inverted Energy Spectrum

Contribution from the Electronic States at Interfaces to Terahertz Photoconductivity in Structures Based on Hg1 –xCdxTe with an Inverted Energy Spectrum

An experimental study is performed of the differences between the electronic states necessarily formed at the boundaries of a topological phase in a vacuum and a trivial buffer in the regions of heterojunction in topological materials based on Hg 1 – x Cd x Te epitaxial films. It is shown that the P...

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Veröffentlicht in:Bulletin of the Russian Academy of Sciences. Physics 2023-06, Vol.87 (6), p.739-743
Hauptverfasser: Kazakov, A. S., Galeeva, A. V., Artamkin, A. I., Ikonnikov, A. V., Chmyr, S. N., Dvoretskiy, S. A., Mikhailov, N. N., Bannikov, M. I., Danilov, S. N., Ryabova, L. I., Khokhlov, D. R.
Format: Artikel
Sprache:eng
Schlagworte:
Buffers
Electron states
Energy spectra
Hadrons
Heavy Ions
Heterojunctions
Nuclear Physics
Photoconductivity
Physics
Physics and Astronomy
Topology
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Zusammenfassung:An experimental study is performed of the differences between the electronic states necessarily formed at the boundaries of a topological phase in a vacuum and a trivial buffer in the regions of heterojunction in topological materials based on Hg 1 – x Cd x Te epitaxial films. It is shown that the PT -symmetric terahertz photoconductivity observed in the specified structures is due precisely to states in the region of topological film/trivial buffer (or cap layer) interfaces.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873823702118