Deep-level defects in Ga-doped silicon crystals

An important sector of the PV community is using gallium-doped silicon instead of boron-doped to prevent boron-oxygen-related light-induced degradation (BO-LID) in Si solar cells. However, the information available in the literature on electrically active defects, which can limit the minority carrie...

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Bibliographische Detailangaben
Hauptverfasser: Fattah, Tarek O. Abdul, Markevich, Vladimir P., De Guzman, Joyce Ann, Coutinho, José, Abrosimov, Nikolay V., Binns, Jeff, Crowe, Iain, Halsall, Matthew P., Peaker, Anthony R.
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Sprache:eng
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