Lingering Times at Resonance: The Case of Sb-based Tunneling Devices

Concurrent natural time scales related to relaxation, recombination, trapping, and drifting processes rule the semiconductor heterostructures' response to external drives when charge carrier fluxes are induced. This paper highlights the role of stoichiometry not only for the quantitative tuning of the electron-hole dynamics but also for significant qualitative contrasts of time-resolved optical responses during the operation of resonant tunneling devices. Therefore, similar device architectures and different compositions have been compared to elucidate the correlation among structural parameters, radiative recombination processes, and electron-hole pair and minority carrier relaxation mechanisms. When these ingredients intermix with the electronic structure in Sb-based tunneling devices, it is proven possible to assess various time scales according to the intensity of the current flux, contrary to what has been observed in As-based tunneling devices with similar design and transport characteristics. These time scales are strongly affected not only by the filling process in the \(\Gamma\) and L states in Sb-based double-barrier quantum wells but also by the small separation between these states, compared to similar heterostructures based on As.