Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric
A doping technique to form the conductive source/drain regions of self-aligned coplanar thin-film transistors (TFTs) employing In-Ga-Zn-O (IGZO) channels prepared by atomic-layer deposition was uniquely demonstrated. The electrical resistivity of the IGZO film was reduced to 2.88×10 -4 Ω∙cm after si...
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| Veröffentlicht in: | IEEE electron device letters 2023-07, Vol.44 (7), p.1-1 |
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| container_title | IEEE electron device letters |
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| creator | Moon, Seo-Hyun Kwon, Young-Ha Seong, Nak-Jin Choi, Kyu-Jeong Yoon, Sung-Min |
| description | A doping technique to form the conductive source/drain regions of self-aligned coplanar thin-film transistors (TFTs) employing In-Ga-Zn-O (IGZO) channels prepared by atomic-layer deposition was uniquely demonstrated. The electrical resistivity of the IGZO film was reduced to 2.88×10 -4 Ω∙cm after simple Al 2 O 3 interlayer dielectric deposition process using H 2 O. The field-effective mobility of the fabricated IGZO TFTs was 23.4 cm 2 /Vs and trustworthy device stabilities were confirmed. Furthermore, small values of the channel width-normalized contact resistance could be obtained to be as low as 8.5 Ω∙cm. |
| doi_str_mv | 10.1109/LED.2023.3274811 |
| format | Article |
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The electrical resistivity of the IGZO film was reduced to 2.88×10 -4 Ω∙cm after simple Al 2 O 3 interlayer dielectric deposition process using H 2 O. The field-effective mobility of the fabricated IGZO TFTs was 23.4 cm 2 /Vs and trustworthy device stabilities were confirmed. 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Furthermore, small values of the channel width-normalized contact resistance could be obtained to be as low as 8.5 Ω∙cm.</description><subject>Aluminum oxide</subject><subject>atomic-layer deposition</subject><subject>Channels</subject><subject>Contact resistance</subject><subject>Deposition</subject><subject>Doping</subject><subject>Electric contacts</subject><subject>Hydrogen</subject><subject>Indium gallium zinc oxide</subject><subject>Interlayers</subject><subject>Logic gates</subject><subject>oxide semiconductor</subject><subject>Radiation effects</subject><subject>Self alignment</subject><subject>self-aligned coplanar structure</subject><subject>Semiconductor devices</subject><subject>Sputtering</subject><subject>Stress</subject><subject>Thin film transistors</subject><subject>thin-film transistor</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkE1Lw0AQhhdRsFbvHjwseE6d_UiTHEu_LBQqWC9ewnYz225JNnETKwV_vFvag5cZGJ53hnkIeWQwYAyyl-V0MuDAxUDwRKaMXZEei-M0gngorkkPEskiwWB4S-7adg_ApExkj_y-oTe1r5TTSKdud-oVuo7Whr5jaaJRabcOCzqum1I55el6tm7pj-12dLScRIv554qOQ8xh2dKDVXRqDOrOHpBO6sa6LTW-rujCdehLdURPJxbLQHir78mNUWWLD5feJx-z6Xr8Gi1X88V4tIw0z3gXCaFxk2ipC8FjGZ5AUWRcDTkgJAI2mYkFF2FY6FCY0jLLilSlGw0CMDWiT57Pextff31j2-X7-tu7cDLnqQDJhAQIFJwp7eu29WjyxttK-WPOID85zoPj_OQ4vzgOkadzxCLiP5xxnkAq_gDTHXfT</recordid><startdate>20230701</startdate><enddate>20230701</enddate><creator>Moon, Seo-Hyun</creator><creator>Kwon, Young-Ha</creator><creator>Seong, Nak-Jin</creator><creator>Choi, Kyu-Jeong</creator><creator>Yoon, Sung-Min</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| source | IEEE |
| subjects | Aluminum oxide atomic-layer deposition Channels Contact resistance Deposition Doping Electric contacts Hydrogen Indium gallium zinc oxide Interlayers Logic gates oxide semiconductor Radiation effects Self alignment self-aligned coplanar structure Semiconductor devices Sputtering Stress Thin film transistors thin-film transistor |
| title | Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric |
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