The effect of SiNx:H stoichiometry on electrical and chemical passivation of Al2O3/SiNx:H stack layer on p-type silicon wafers

In this paper, we report on the influence of SiNx:H stoichiometry on Al2O3/SiNx:H passivation stacks. We analyze the fabricated dielectric layers with four methods: FTIR, C-V, PCD and EQE. SiNx:H with a lower refractive index (SiN1) is poorer in H content than the one with a higher refractive index...

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Hauptverfasser:	Canar, Hasan Hüseyin, Bektaş, Gence, Keçeci, Ahmet Emin, Asav, Hasan, Bütüner, Sümeyye Koçak, Arıkan, Bülent, Turan, Raşit
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum oxide Charge density Passivity Photovoltaic cells Refractivity Silicon Silicon wafers Solar cells Stacks Stoichiometry Wafers
Online-Zugang:	Volltext
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