Magnetoresistance of GaPAs and InSb whiskers
The magnetoresistance of GaP x As 1− x ( x = 0.4) whiskers with a doping concentration of silicon in the range from the dielectric side of metal-insulated transition (MIT) (~ 10 17 cm −3 ) to its critical concentration ( N c ~ 5 × 10 18 cm −3 ) at cryogenic temperatures of 4.2–77 K and magnetic...
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| Veröffentlicht in: | Applied nanoscience 2023-07, Vol.13 (7), p.4701-4707 |
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| container_title | Applied nanoscience |
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| creator | Druzhinin, Anatoly Ostrovskii, Igor Khoverko, Yuriy Liakh-Kaguy, Natalia Chemerys, Dmytro |
| description | The magnetoresistance of GaP
x
As
1−
x
(
x
= 0.4) whiskers with a doping concentration of silicon in the range from the dielectric side of metal-insulated transition (MIT) (~ 10
17
cm
−3
) to its critical concentration (
N
c
~ 5 × 10
18
cm
−3
) at cryogenic temperatures of 4.2–77 K and magnetic field induction of 0–14 T was studied. A negative magnetic resistance (NMR) with a maximum value of 7% was found at a temperature of 4.2 K and a magnetic field of 4.5 T, which is dependent on magnetic field induction and current direction. The NMR absolute value reduces with increasing temperature was observed in the transverse and longitudinal magnetoresistance. The nature of the revealed NMR effect was discussed in the studied samples. A similar effect was observed in InSb whiskers. There are four possible reasons for the NMR effect in the GaP
x
As
1−
x
and InSb whiskers such as dimensional quantization, the magnetic ordering of electron spins or magnetic ordering due to uncontrolled magnetic dopant introduction and quantum interference of the electron wave function. The GaP
x
As
1−
x
whisker application as the temperature sensor was proposed due to the studied results of the temperature dependence of their conductivity. |
| doi_str_mv | 10.1007/s13204-022-02596-2 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2824497234</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2824497234</sourcerecordid><originalsourceid>FETCH-LOGICAL-c270t-6e7c6d13f82abd0f89d9ba266785dcf5bf6435b26feaf7ec12486064c50e54003</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWGr_gKcFr65OJl-7x1K0LVQU1HPIZpPaqtmabBH_vdEVvTkwzBzeD3gIOaVwQQHUZaIMgZeAmFfUssQDMkJaQykEVYe_P9THZJLSFvIIriQTI3J-Y9bB9V10aZN6E6wrOl_Mzd00FSa0xTLcN8X70yY9u5hOyJE3L8lNfu6YPF5fPcwW5ep2vpxNV6VFBX0pnbKypcxXaJoWfFW3dWNQSlWJ1nrReMmZaFB6Z7xyliKvJEhuBTjBAdiYnA25u9i97V3q9bbbx5ArNVbIea2Q8azCQWVjl1J0Xu_i5tXED01Bf4HRAxidwehvMBqziQ2mlMVh7eJf9D-uT3jlY7c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2824497234</pqid></control><display><type>article</type><title>Magnetoresistance of GaPAs and InSb whiskers</title><source>SpringerLink Journals</source><creator>Druzhinin, Anatoly ; Ostrovskii, Igor ; Khoverko, Yuriy ; Liakh-Kaguy, Natalia ; Chemerys, Dmytro</creator><creatorcontrib>Druzhinin, Anatoly ; Ostrovskii, Igor ; Khoverko, Yuriy ; Liakh-Kaguy, Natalia ; Chemerys, Dmytro</creatorcontrib><description>The magnetoresistance of GaP
x
As
1−
x
(
x
= 0.4) whiskers with a doping concentration of silicon in the range from the dielectric side of metal-insulated transition (MIT) (~ 10
17
cm
−3
) to its critical concentration (
N
c
~ 5 × 10
18
cm
−3
) at cryogenic temperatures of 4.2–77 K and magnetic field induction of 0–14 T was studied. A negative magnetic resistance (NMR) with a maximum value of 7% was found at a temperature of 4.2 K and a magnetic field of 4.5 T, which is dependent on magnetic field induction and current direction. The NMR absolute value reduces with increasing temperature was observed in the transverse and longitudinal magnetoresistance. The nature of the revealed NMR effect was discussed in the studied samples. A similar effect was observed in InSb whiskers. There are four possible reasons for the NMR effect in the GaP
x
As
1−
x
and InSb whiskers such as dimensional quantization, the magnetic ordering of electron spins or magnetic ordering due to uncontrolled magnetic dopant introduction and quantum interference of the electron wave function. The GaP
x
As
1−
x
whisker application as the temperature sensor was proposed due to the studied results of the temperature dependence of their conductivity.</description><identifier>ISSN: 2190-5509</identifier><identifier>EISSN: 2190-5517</identifier><identifier>DOI: 10.1007/s13204-022-02596-2</identifier><language>eng</language><publisher>Cham: Springer International Publishing</publisher><subject>Chemistry and Materials Science ; Cryogenic temperature ; Electron spin ; Electrons ; Indium antimonide ; Intermetallic compounds ; Magnetic fields ; Magnetic induction ; Magnetoresistance ; Magnetoresistivity ; Materials Science ; Membrane Biology ; Nanochemistry ; Nanotechnology ; Nanotechnology and Microengineering ; NMR ; Nuclear magnetic resonance ; Original Article ; Temperature ; Temperature dependence ; Temperature sensors ; Wave functions</subject><ispartof>Applied nanoscience, 2023-07, Vol.13 (7), p.4701-4707</ispartof><rights>King Abdulaziz City for Science and Technology 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c270t-6e7c6d13f82abd0f89d9ba266785dcf5bf6435b26feaf7ec12486064c50e54003</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s13204-022-02596-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s13204-022-02596-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Druzhinin, Anatoly</creatorcontrib><creatorcontrib>Ostrovskii, Igor</creatorcontrib><creatorcontrib>Khoverko, Yuriy</creatorcontrib><creatorcontrib>Liakh-Kaguy, Natalia</creatorcontrib><creatorcontrib>Chemerys, Dmytro</creatorcontrib><title>Magnetoresistance of GaPAs and InSb whiskers</title><title>Applied nanoscience</title><addtitle>Appl Nanosci</addtitle><description>The magnetoresistance of GaP
x
As
1−
x
(
x
= 0.4) whiskers with a doping concentration of silicon in the range from the dielectric side of metal-insulated transition (MIT) (~ 10
17
cm
−3
) to its critical concentration (
N
c
~ 5 × 10
18
cm
−3
) at cryogenic temperatures of 4.2–77 K and magnetic field induction of 0–14 T was studied. A negative magnetic resistance (NMR) with a maximum value of 7% was found at a temperature of 4.2 K and a magnetic field of 4.5 T, which is dependent on magnetic field induction and current direction. The NMR absolute value reduces with increasing temperature was observed in the transverse and longitudinal magnetoresistance. The nature of the revealed NMR effect was discussed in the studied samples. A similar effect was observed in InSb whiskers. There are four possible reasons for the NMR effect in the GaP
x
As
1−
x
and InSb whiskers such as dimensional quantization, the magnetic ordering of electron spins or magnetic ordering due to uncontrolled magnetic dopant introduction and quantum interference of the electron wave function. The GaP
x
As
1−
x
whisker application as the temperature sensor was proposed due to the studied results of the temperature dependence of their conductivity.</description><subject>Chemistry and Materials Science</subject><subject>Cryogenic temperature</subject><subject>Electron spin</subject><subject>Electrons</subject><subject>Indium antimonide</subject><subject>Intermetallic compounds</subject><subject>Magnetic fields</subject><subject>Magnetic induction</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Materials Science</subject><subject>Membrane Biology</subject><subject>Nanochemistry</subject><subject>Nanotechnology</subject><subject>Nanotechnology and Microengineering</subject><subject>NMR</subject><subject>Nuclear magnetic resonance</subject><subject>Original Article</subject><subject>Temperature</subject><subject>Temperature dependence</subject><subject>Temperature sensors</subject><subject>Wave functions</subject><issn>2190-5509</issn><issn>2190-5517</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWGr_gKcFr65OJl-7x1K0LVQU1HPIZpPaqtmabBH_vdEVvTkwzBzeD3gIOaVwQQHUZaIMgZeAmFfUssQDMkJaQykEVYe_P9THZJLSFvIIriQTI3J-Y9bB9V10aZN6E6wrOl_Mzd00FSa0xTLcN8X70yY9u5hOyJE3L8lNfu6YPF5fPcwW5ep2vpxNV6VFBX0pnbKypcxXaJoWfFW3dWNQSlWJ1nrReMmZaFB6Z7xyliKvJEhuBTjBAdiYnA25u9i97V3q9bbbx5ArNVbIea2Q8azCQWVjl1J0Xu_i5tXED01Bf4HRAxidwehvMBqziQ2mlMVh7eJf9D-uT3jlY7c</recordid><startdate>20230701</startdate><enddate>20230701</enddate><creator>Druzhinin, Anatoly</creator><creator>Ostrovskii, Igor</creator><creator>Khoverko, Yuriy</creator><creator>Liakh-Kaguy, Natalia</creator><creator>Chemerys, Dmytro</creator><general>Springer International Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20230701</creationdate><title>Magnetoresistance of GaPAs and InSb whiskers</title><author>Druzhinin, Anatoly ; Ostrovskii, Igor ; Khoverko, Yuriy ; Liakh-Kaguy, Natalia ; Chemerys, Dmytro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-6e7c6d13f82abd0f89d9ba266785dcf5bf6435b26feaf7ec12486064c50e54003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Chemistry and Materials Science</topic><topic>Cryogenic temperature</topic><topic>Electron spin</topic><topic>Electrons</topic><topic>Indium antimonide</topic><topic>Intermetallic compounds</topic><topic>Magnetic fields</topic><topic>Magnetic induction</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Materials Science</topic><topic>Membrane Biology</topic><topic>Nanochemistry</topic><topic>Nanotechnology</topic><topic>Nanotechnology and Microengineering</topic><topic>NMR</topic><topic>Nuclear magnetic resonance</topic><topic>Original Article</topic><topic>Temperature</topic><topic>Temperature dependence</topic><topic>Temperature sensors</topic><topic>Wave functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Druzhinin, Anatoly</creatorcontrib><creatorcontrib>Ostrovskii, Igor</creatorcontrib><creatorcontrib>Khoverko, Yuriy</creatorcontrib><creatorcontrib>Liakh-Kaguy, Natalia</creatorcontrib><creatorcontrib>Chemerys, Dmytro</creatorcontrib><collection>CrossRef</collection><jtitle>Applied nanoscience</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Druzhinin, Anatoly</au><au>Ostrovskii, Igor</au><au>Khoverko, Yuriy</au><au>Liakh-Kaguy, Natalia</au><au>Chemerys, Dmytro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetoresistance of GaPAs and InSb whiskers</atitle><jtitle>Applied nanoscience</jtitle><stitle>Appl Nanosci</stitle><date>2023-07-01</date><risdate>2023</risdate><volume>13</volume><issue>7</issue><spage>4701</spage><epage>4707</epage><pages>4701-4707</pages><issn>2190-5509</issn><eissn>2190-5517</eissn><abstract>The magnetoresistance of GaP
x
As
1−
x
(
x
= 0.4) whiskers with a doping concentration of silicon in the range from the dielectric side of metal-insulated transition (MIT) (~ 10
17
cm
−3
) to its critical concentration (
N
c
~ 5 × 10
18
cm
−3
) at cryogenic temperatures of 4.2–77 K and magnetic field induction of 0–14 T was studied. A negative magnetic resistance (NMR) with a maximum value of 7% was found at a temperature of 4.2 K and a magnetic field of 4.5 T, which is dependent on magnetic field induction and current direction. The NMR absolute value reduces with increasing temperature was observed in the transverse and longitudinal magnetoresistance. The nature of the revealed NMR effect was discussed in the studied samples. A similar effect was observed in InSb whiskers. There are four possible reasons for the NMR effect in the GaP
x
As
1−
x
and InSb whiskers such as dimensional quantization, the magnetic ordering of electron spins or magnetic ordering due to uncontrolled magnetic dopant introduction and quantum interference of the electron wave function. The GaP
x
As
1−
x
whisker application as the temperature sensor was proposed due to the studied results of the temperature dependence of their conductivity.</abstract><cop>Cham</cop><pub>Springer International Publishing</pub><doi>10.1007/s13204-022-02596-2</doi><tpages>7</tpages></addata></record> |
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| language | eng |
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| source | SpringerLink Journals |
| subjects | Chemistry and Materials Science Cryogenic temperature Electron spin Electrons Indium antimonide Intermetallic compounds Magnetic fields Magnetic induction Magnetoresistance Magnetoresistivity Materials Science Membrane Biology Nanochemistry Nanotechnology Nanotechnology and Microengineering NMR Nuclear magnetic resonance Original Article Temperature Temperature dependence Temperature sensors Wave functions |
| title | Magnetoresistance of GaPAs and InSb whiskers |
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