Ferroelectric Hf0.5Zr0.5O2-gated synaptic transistors with large conductance dynamic range and multilevel states

Benefiting from the nonvolatile and fast programming operations of ferroelectric materials, ferroelectric synaptic transistors (FSTs) are promising in neuromorphic computing. However, it is challenging to realize conductance with a large dynamic range ( G max / G min ) and multilevel states simultan...

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Veröffentlicht in:	Science China materials 2023-06, Vol.66 (6), p.2372-2382
Hauptverfasser:	Luo, Chunlai, Zhang, Yan, Shuai, Wentao, He, Kexin, Li, Ming, Tao, Ruiqiang, Chen, Deyang, Fan, Zhen, Zhang, Bin, Zhou, Xiaoyuan, Dai, Ji-Yan, Zhou, Guofu, Lu, Xubing, Liu, Jun-Ming
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge injection Chemistry and Materials Science Chemistry/Food Science Dynamic range Energy consumption Ferroelectric materials Ferroelectricity Handwriting recognition Indium oxides Materials Science Transistors
Online-Zugang:	Volltext
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