Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications

Solution-processed photoresists have been forerunners in semiconductor patterning for decades. Even with the drastic reduction in photolithography wavelength, traditional spin-on resists still support the fabrication of the most advanced, sub-5 nm node logic and memory devices using EUV lithography...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2023-06, Vol.62 (SG), p.SG0812
Hauptverfasser:	Le, Dan N., Park, Taehee, Hwang, Su Min, Kim, Jin-Hyun, Jung, Yong Chan, Tiwale, Nikhil, Subramanian, Ashwanth, Lee, Won-Il, Choi, Rino, Sung, Myung M., Nam, Chang-Yong, Kim, Jiyoung
Format:	Artikel
Sprache:	eng
Schlagworte:	area-selective deposition (ASD) atomic layer deposition (ALD) Atomic layer epitaxy EUVL extreme ultraviolet lithography hybrid resists MATERIALS SCIENCE Memory devices molecular atomic layer deposition (MALD) Photolithography Photoresists Resists vapor-phase infiltration (VPI)
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