Fabrication of a Si/ZnO Heterojunction Diode Using a Nonconventional Sol–Gel Method
PN heterojunction diodes are very useful for solar cell, light-emitting diode, and photodiode applications. In this paper, PN heterojunction diodes were successfully fabricated using p -type silicon and zinc oxide (ZnO) grown by a nonconventional sol–gel technique. The current–voltage ( I – V ) char...
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| Veröffentlicht in: | Journal of electronic materials 2023-07, Vol.52 (7), p.4369-4374 |
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| creator | Alrefaee, Maher Singh, Udai P. Das, Susanta Kumar |
| description | PN heterojunction diodes are very useful for solar cell, light-emitting diode, and photodiode applications. In this paper, PN heterojunction diodes were successfully fabricated using
p
-type silicon and zinc oxide (ZnO) grown by a nonconventional sol–gel technique. The current–voltage (
I
–
V
) characteristics of the prepared diode were measured at room temperature. The significant parameters including static resistance, dynamic resistance, and rectifying behavior were estimated. In contrast to the conventional method, the ZnO powder precursor used in this work has extremely high thermal and chemical stability. Also, this method is cost-effective due to the use of laboratory-grade ZnO powder. The effect of doping on these characteristics and parameters was studied in detail.
Graphic Abstract |
| doi_str_mv | 10.1007/s11664-023-10335-8 |
| format | Article |
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p
-type silicon and zinc oxide (ZnO) grown by a nonconventional sol–gel technique. The current–voltage (
I
–
V
) characteristics of the prepared diode were measured at room temperature. The significant parameters including static resistance, dynamic resistance, and rectifying behavior were estimated. In contrast to the conventional method, the ZnO powder precursor used in this work has extremely high thermal and chemical stability. Also, this method is cost-effective due to the use of laboratory-grade ZnO powder. The effect of doping on these characteristics and parameters was studied in detail.
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p
-type silicon and zinc oxide (ZnO) grown by a nonconventional sol–gel technique. The current–voltage (
I
–
V
) characteristics of the prepared diode were measured at room temperature. The significant parameters including static resistance, dynamic resistance, and rectifying behavior were estimated. In contrast to the conventional method, the ZnO powder precursor used in this work has extremely high thermal and chemical stability. Also, this method is cost-effective due to the use of laboratory-grade ZnO powder. The effect of doping on these characteristics and parameters was studied in detail.
Graphic Abstract</description><subject>Aluminum</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Current voltage characteristics</subject><subject>Electronics and Microelectronics</subject><subject>Glass substrates</subject><subject>Heterojunctions</subject><subject>II-VI semiconductors</subject><subject>Instrumentation</subject><subject>International Conference on Organic Electronics 2022</subject><subject>Light emitting diodes</subject><subject>Materials Science</subject><subject>Molecular beam epitaxy</subject><subject>Morphology</subject><subject>Optical and Electronic Materials</subject><subject>Parameters</subject><subject>Photodiodes</subject><subject>Photovoltaic cells</subject><subject>Room temperature</subject><subject>Silicon</subject><subject>Sol-gel processes</subject><subject>Solar cells</subject><subject>Solid State Physics</subject><subject>Thin films</subject><subject>Topical Collection: International Conference on Organic Electronics 2022</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9UEtOwzAQtRBIlMIFWEViHTq2Y8dZogItUqGLUgmxsZLYLqmCXewUiR134IacBLdBYsdqNPM-8_QQOsdwiQHyUcCY8ywFQlMMlLJUHKABZllcBX86RAOgHKeMUHaMTkJYA2CGBR6g5W1Z-aYuu8bZxJmkTBbN6NnOk6nutHfrra330HXjlE6WobGryHlwtnb2XdsdVrbJwrXfn18T3Sb3untx6hQdmbIN-ux3DuOfm8fxNJ3NJ3fjq1lakxy6tCIFZ4axShRMVaIuSGEyQTSAIPEAKiPC5JjkpigU4EzVYHilYvKyopxoOkQXve_Gu7etDp1cu62PiYIkgmAGwAiLLNKzau9C8NrIjW9eS_8hMchdfbKvT8b65L4-KaKI9qIQyXal_Z_1P6ofaJlyeQ</recordid><startdate>20230701</startdate><enddate>20230701</enddate><creator>Alrefaee, Maher</creator><creator>Singh, Udai P.</creator><creator>Das, Susanta Kumar</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0001-5008-3033</orcidid></search><sort><creationdate>20230701</creationdate><title>Fabrication of a Si/ZnO Heterojunction Diode Using a Nonconventional Sol–Gel Method</title><author>Alrefaee, Maher ; Singh, Udai P. ; Das, Susanta Kumar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-b2965f55b895db8c929f482e00825db0d428f7127f99d014dc0f6bd518ab362e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Aluminum</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Current voltage characteristics</topic><topic>Electronics and Microelectronics</topic><topic>Glass substrates</topic><topic>Heterojunctions</topic><topic>II-VI semiconductors</topic><topic>Instrumentation</topic><topic>International Conference on Organic Electronics 2022</topic><topic>Light emitting diodes</topic><topic>Materials Science</topic><topic>Molecular beam epitaxy</topic><topic>Morphology</topic><topic>Optical and Electronic Materials</topic><topic>Parameters</topic><topic>Photodiodes</topic><topic>Photovoltaic cells</topic><topic>Room temperature</topic><topic>Silicon</topic><topic>Sol-gel processes</topic><topic>Solar cells</topic><topic>Solid State Physics</topic><topic>Thin films</topic><topic>Topical Collection: International Conference on Organic Electronics 2022</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alrefaee, Maher</creatorcontrib><creatorcontrib>Singh, Udai P.</creatorcontrib><creatorcontrib>Das, Susanta Kumar</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alrefaee, Maher</au><au>Singh, Udai P.</au><au>Das, Susanta Kumar</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of a Si/ZnO Heterojunction Diode Using a Nonconventional Sol–Gel Method</atitle><jtitle>Journal of electronic materials</jtitle><stitle>J. Electron. Mater</stitle><date>2023-07-01</date><risdate>2023</risdate><volume>52</volume><issue>7</issue><spage>4369</spage><epage>4374</epage><pages>4369-4374</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>PN heterojunction diodes are very useful for solar cell, light-emitting diode, and photodiode applications. In this paper, PN heterojunction diodes were successfully fabricated using
p
-type silicon and zinc oxide (ZnO) grown by a nonconventional sol–gel technique. The current–voltage (
I
–
V
) characteristics of the prepared diode were measured at room temperature. The significant parameters including static resistance, dynamic resistance, and rectifying behavior were estimated. In contrast to the conventional method, the ZnO powder precursor used in this work has extremely high thermal and chemical stability. Also, this method is cost-effective due to the use of laboratory-grade ZnO powder. The effect of doping on these characteristics and parameters was studied in detail.
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| subjects | Aluminum Characterization and Evaluation of Materials Chemistry and Materials Science Current voltage characteristics Electronics and Microelectronics Glass substrates Heterojunctions II-VI semiconductors Instrumentation International Conference on Organic Electronics 2022 Light emitting diodes Materials Science Molecular beam epitaxy Morphology Optical and Electronic Materials Parameters Photodiodes Photovoltaic cells Room temperature Silicon Sol-gel processes Solar cells Solid State Physics Thin films Topical Collection: International Conference on Organic Electronics 2022 Zinc oxide Zinc oxides |
| title | Fabrication of a Si/ZnO Heterojunction Diode Using a Nonconventional Sol–Gel Method |
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