Impedance Characteristics of a Bi-section Gain Lever Laser Diode for 5G Applications
This paper reports the numerical evaluation of impedance response of a bi-section laser diode having multiple quantum wells, operating at 1.3 μm employing gain lever effect. The current in the absorber section is varied linearly for a fixed gain section current and parameters such as impedance, reso...
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| Veröffentlicht in: | Arabian journal for science and engineering (2011) 2023-06, Vol.48 (6), p.8181-8188 |
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| creator | Ashok, P. Madhan, M. Ganesh |
| description | This paper reports the numerical evaluation of impedance response of a bi-section laser diode having multiple quantum wells, operating at 1.3 μm employing gain lever effect. The current in the absorber section is varied linearly for a fixed gain section current and parameters such as impedance, resonant frequency, bandwidth are computed by numerically solving the rate equations. A quarter-wavelength (λ/4) transmission line (QWT) is designed to perfectly match the laser diode to 50 Ω at 5G NR (new radio) C-band (3.3–5 GHz) centered at 4 GHz, for radio over fiber (RoF) applications. For the device under consideration, at a gain section current of 60 mA and absorber section current of 4 mA, the magnitude of intrinsic impedance was found to be 1.2 Ω at a frequency of 4 GHz. The bandwidth of the normalized modulation response was found to be 1.68 GHz. Also, gain lever laser diode showed 23.46% improvement in optical modulation index for its application in radio over fiber links, over the conventional single section laser diodes. |
| doi_str_mv | 10.1007/s13369-023-07813-w |
| format | Article |
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Also, gain lever laser diode showed 23.46% improvement in optical modulation index for its application in radio over fiber links, over the conventional single section laser diodes.</description><identifier>ISSN: 2193-567X</identifier><identifier>ISSN: 1319-8025</identifier><identifier>EISSN: 2191-4281</identifier><identifier>DOI: 10.1007/s13369-023-07813-w</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>5G mobile communication ; Absorbers ; Bandwidths ; C band ; Diodes ; Engineering ; Humanities and Social Sciences ; Impedance ; Lasers ; Levers ; Light modulation ; Multi Quantum Wells ; multidisciplinary ; Radio ; Research Article-Physics ; Resonant frequencies ; Science ; Semiconductor lasers ; Transmission lines</subject><ispartof>Arabian journal for science and engineering (2011), 2023-06, Vol.48 (6), p.8181-8188</ispartof><rights>King Fahd University of Petroleum & Minerals 2023. 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Ganesh</creatorcontrib><title>Impedance Characteristics of a Bi-section Gain Lever Laser Diode for 5G Applications</title><title>Arabian journal for science and engineering (2011)</title><addtitle>Arab J Sci Eng</addtitle><description>This paper reports the numerical evaluation of impedance response of a bi-section laser diode having multiple quantum wells, operating at 1.3 μm employing gain lever effect. The current in the absorber section is varied linearly for a fixed gain section current and parameters such as impedance, resonant frequency, bandwidth are computed by numerically solving the rate equations. A quarter-wavelength (λ/4) transmission line (QWT) is designed to perfectly match the laser diode to 50 Ω at 5G NR (new radio) C-band (3.3–5 GHz) centered at 4 GHz, for radio over fiber (RoF) applications. For the device under consideration, at a gain section current of 60 mA and absorber section current of 4 mA, the magnitude of intrinsic impedance was found to be 1.2 Ω at a frequency of 4 GHz. The bandwidth of the normalized modulation response was found to be 1.68 GHz. Also, gain lever laser diode showed 23.46% improvement in optical modulation index for its application in radio over fiber links, over the conventional single section laser diodes.</description><subject>5G mobile communication</subject><subject>Absorbers</subject><subject>Bandwidths</subject><subject>C band</subject><subject>Diodes</subject><subject>Engineering</subject><subject>Humanities and Social Sciences</subject><subject>Impedance</subject><subject>Lasers</subject><subject>Levers</subject><subject>Light modulation</subject><subject>Multi Quantum Wells</subject><subject>multidisciplinary</subject><subject>Radio</subject><subject>Research Article-Physics</subject><subject>Resonant frequencies</subject><subject>Science</subject><subject>Semiconductor lasers</subject><subject>Transmission lines</subject><issn>2193-567X</issn><issn>1319-8025</issn><issn>2191-4281</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLwzAUx4MoOOa-gKeA52iS1ybNcU6dg4KXCd5CmqYa2ZqadA6__bpV8OblvXf4_f8PfghdM3rLKJV3iQEIRSgHQmXBgOzP0IQzxUjGC3Z-uoHkQr5dollKvqJZASpnDCZovdp2rjatdXjxYaKxvYs-9d4mHBps8L0nydnehxYvjW9x6b5dxKVJw3zwoXa4CRHnSzzvuo235kimK3TRmE1ys989Ra9Pj-vFMylflqvFvCSWS9oTpqhyLFNgoKlkIymvZCYt1EqIqhKQVyAEz5kRXNSVkzWvTeZyW1NphOIAU3Qz9nYxfO1c6vVn2MV2eKl5wRnIjA_YFPGRsjGkFF2ju-i3Jv5oRvVRoB4F6kGgPgnU-yEEYygNcPvu4l_1P6kDNJhyZw</recordid><startdate>20230601</startdate><enddate>20230601</enddate><creator>Ashok, P.</creator><creator>Madhan, M. Ganesh</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-5859-6041</orcidid></search><sort><creationdate>20230601</creationdate><title>Impedance Characteristics of a Bi-section Gain Lever Laser Diode for 5G Applications</title><author>Ashok, P. ; Madhan, M. Ganesh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-1909e1493a3fb7f702b747c3d966bb635b366251a626dbe7d2da4e5cd07a69233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>5G mobile communication</topic><topic>Absorbers</topic><topic>Bandwidths</topic><topic>C band</topic><topic>Diodes</topic><topic>Engineering</topic><topic>Humanities and Social Sciences</topic><topic>Impedance</topic><topic>Lasers</topic><topic>Levers</topic><topic>Light modulation</topic><topic>Multi Quantum Wells</topic><topic>multidisciplinary</topic><topic>Radio</topic><topic>Research Article-Physics</topic><topic>Resonant frequencies</topic><topic>Science</topic><topic>Semiconductor lasers</topic><topic>Transmission lines</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ashok, P.</creatorcontrib><creatorcontrib>Madhan, M. Ganesh</creatorcontrib><collection>CrossRef</collection><jtitle>Arabian journal for science and engineering (2011)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ashok, P.</au><au>Madhan, M. Ganesh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impedance Characteristics of a Bi-section Gain Lever Laser Diode for 5G Applications</atitle><jtitle>Arabian journal for science and engineering (2011)</jtitle><stitle>Arab J Sci Eng</stitle><date>2023-06-01</date><risdate>2023</risdate><volume>48</volume><issue>6</issue><spage>8181</spage><epage>8188</epage><pages>8181-8188</pages><issn>2193-567X</issn><issn>1319-8025</issn><eissn>2191-4281</eissn><abstract>This paper reports the numerical evaluation of impedance response of a bi-section laser diode having multiple quantum wells, operating at 1.3 μm employing gain lever effect. The current in the absorber section is varied linearly for a fixed gain section current and parameters such as impedance, resonant frequency, bandwidth are computed by numerically solving the rate equations. A quarter-wavelength (λ/4) transmission line (QWT) is designed to perfectly match the laser diode to 50 Ω at 5G NR (new radio) C-band (3.3–5 GHz) centered at 4 GHz, for radio over fiber (RoF) applications. For the device under consideration, at a gain section current of 60 mA and absorber section current of 4 mA, the magnitude of intrinsic impedance was found to be 1.2 Ω at a frequency of 4 GHz. The bandwidth of the normalized modulation response was found to be 1.68 GHz. Also, gain lever laser diode showed 23.46% improvement in optical modulation index for its application in radio over fiber links, over the conventional single section laser diodes.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s13369-023-07813-w</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-5859-6041</orcidid></addata></record> |
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| language | eng |
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| source | SpringerNature Journals |
| subjects | 5G mobile communication Absorbers Bandwidths C band Diodes Engineering Humanities and Social Sciences Impedance Lasers Levers Light modulation Multi Quantum Wells multidisciplinary Radio Research Article-Physics Resonant frequencies Science Semiconductor lasers Transmission lines |
| title | Impedance Characteristics of a Bi-section Gain Lever Laser Diode for 5G Applications |
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