Activation mechanism of ruthenium etching by Cl-based radicals in O2/Cl2 plasma

The Ru etching mechanism was investigated using O2/Cl2 plasma with O, ClO, and Cl radicals. The etch rate drastically increased with a 10%–20% addition of Cl2 to O2 and was lower when using pure O2 or Cl2-rich gas in an ECR etcher. Experimental results indicate that chemical reactions involving Cl-b...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2023-07, Vol.62 (SI), p.SI1014
Hauptverfasser:	Imai, Masaya, Matsui, Miyako, Sugano, Ryoko, Shiota, Takashi, Takasaki, Ko-ichi, Miura, Makoto, Ishii, Yohei, Kuwahara, Kenichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical reactions Density functional theory DFT simulation Etching interconnect plasma etching Radicals Ruthenium Ruthenium oxide surface reaction
Online-Zugang:	Volltext
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