Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range
Multilayer structures based on semiconductor materials of the antimonide group with InSb and Al x In 1 – x Sb absorbing layers, including structures with an InAlSb barrier layer (InSb/InAlSb/InSb), designed for the manufacturing of advanced photodetectors (PDs) that detect radiation in the mid-wave...
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| Veröffentlicht in: | Journal of communications technology & electronics 2023-03, Vol.68 (3), p.316-324 |
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| container_title | Journal of communications technology & electronics |
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| creator | Boltar, K. O. Iakovleva, N. I. Lopukhin, A. A. Vlasov, P. V. |
| description | Multilayer structures based on semiconductor materials of the antimonide group with InSb and Al
x
In
1 –
x
Sb absorbing layers, including structures with an InAlSb barrier layer (InSb/InAlSb/InSb), designed for the manufacturing of advanced photodetectors (PDs) that detect radiation in the mid-wave infrared (IR) range. On the basis of
p
–
i
–
n
and barrier structures grown by the MBE method, photosensitive elements (PSEs) of various topologies with InSb and Al
x
In
1 –
x
Sb absorbing layers were fabricated. It is shown that wide-gap Al
x
In
1 –
x
Sb ternary solutions, which detect radiation in the medium-wavelength region of the spectrum, are an alternative to the narrow-gap binary compound InSb, because, due to the wide-gap, photodiodes based on Al
x
In
1 –
x
Sb have lower currents and, therefore, noise. The average values of detectivity
D
* and noise-equivalent temperature difference (NETD) have been measured for various topology photodetectors, so
D
* was more than 10
11
cm W
–1
Hz
1/2
in
p
–
i
–
n
structures, and
D
* exceed of 10
12
cm W
–1
Hz
1/2
in barrier structures. |
| doi_str_mv | 10.1134/S106422692303004X |
| format | Article |
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x
In
1 –
x
Sb absorbing layers, including structures with an InAlSb barrier layer (InSb/InAlSb/InSb), designed for the manufacturing of advanced photodetectors (PDs) that detect radiation in the mid-wave infrared (IR) range. On the basis of
p
–
i
–
n
and barrier structures grown by the MBE method, photosensitive elements (PSEs) of various topologies with InSb and Al
x
In
1 –
x
Sb absorbing layers were fabricated. It is shown that wide-gap Al
x
In
1 –
x
Sb ternary solutions, which detect radiation in the medium-wavelength region of the spectrum, are an alternative to the narrow-gap binary compound InSb, because, due to the wide-gap, photodiodes based on Al
x
In
1 –
x
Sb have lower currents and, therefore, noise. The average values of detectivity
D
* and noise-equivalent temperature difference (NETD) have been measured for various topology photodetectors, so
D
* was more than 10
11
cm W
–1
Hz
1/2
in
p
–
i
–
n
structures, and
D
* exceed of 10
12
cm W
–1
Hz
1/2
in barrier structures.</description><identifier>ISSN: 1064-2269</identifier><identifier>EISSN: 1555-6557</identifier><identifier>DOI: 10.1134/S106422692303004X</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Barrier layers ; Communications Engineering ; Engineering ; Indium antimonide ; Intermetallic compounds ; Multilayers ; Networks ; Photodiodes ; Photometers ; Photosensitivity ; Radiation ; Semiconductor materials ; Semiconductors ; Topology</subject><ispartof>Journal of communications technology & electronics, 2023-03, Vol.68 (3), p.316-324</ispartof><rights>Pleiades Publishing, Inc. 2023. ISSN 1064-2269, Journal of Communications Technology and Electronics, 2023, Vol. 68, No. 3, pp. 316–324. © Pleiades Publishing, Inc., 2023. Russian Text © The Author(s), 2021, published in Prikladnaya Fizika, 2021, No. 6, pp. 30–40.</rights><rights>COPYRIGHT 2023 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c426t-3bb768b567a07338449af5457c6180c11b3a348d0c5b0e23acd269ceca9bbf553</citedby><cites>FETCH-LOGICAL-c426t-3bb768b567a07338449af5457c6180c11b3a348d0c5b0e23acd269ceca9bbf553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S106422692303004X$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S106422692303004X$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Boltar, K. O.</creatorcontrib><creatorcontrib>Iakovleva, N. I.</creatorcontrib><creatorcontrib>Lopukhin, A. A.</creatorcontrib><creatorcontrib>Vlasov, P. V.</creatorcontrib><title>Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range</title><title>Journal of communications technology & electronics</title><addtitle>J. Commun. Technol. Electron</addtitle><description>Multilayer structures based on semiconductor materials of the antimonide group with InSb and Al
x
In
1 –
x
Sb absorbing layers, including structures with an InAlSb barrier layer (InSb/InAlSb/InSb), designed for the manufacturing of advanced photodetectors (PDs) that detect radiation in the mid-wave infrared (IR) range. On the basis of
p
–
i
–
n
and barrier structures grown by the MBE method, photosensitive elements (PSEs) of various topologies with InSb and Al
x
In
1 –
x
Sb absorbing layers were fabricated. It is shown that wide-gap Al
x
In
1 –
x
Sb ternary solutions, which detect radiation in the medium-wavelength region of the spectrum, are an alternative to the narrow-gap binary compound InSb, because, due to the wide-gap, photodiodes based on Al
x
In
1 –
x
Sb have lower currents and, therefore, noise. The average values of detectivity
D
* and noise-equivalent temperature difference (NETD) have been measured for various topology photodetectors, so
D
* was more than 10
11
cm W
–1
Hz
1/2
in
p
–
i
–
n
structures, and
D
* exceed of 10
12
cm W
–1
Hz
1/2
in barrier structures.</description><subject>Barrier layers</subject><subject>Communications Engineering</subject><subject>Engineering</subject><subject>Indium antimonide</subject><subject>Intermetallic compounds</subject><subject>Multilayers</subject><subject>Networks</subject><subject>Photodiodes</subject><subject>Photometers</subject><subject>Photosensitivity</subject><subject>Radiation</subject><subject>Semiconductor materials</subject><subject>Semiconductors</subject><subject>Topology</subject><issn>1064-2269</issn><issn>1555-6557</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>N95</sourceid><recordid>eNp1kd1K5DAUgIussO7oA3gX2KuFrSbNT9vLWffHgRFlRtG7kqanM5GZZkxS2b3zHXxDn8QjFdZBJOSHk-874eQkySGjR4xxcTxnVIksU2XGKadU3Owke0xKmSop8094xuv05f5z8iWEW0p5qSjfS_TF0kXXQAQTnSc_4d4aCOSHDtAQ15HN08OjxdkR3TUY9t6CJ_PoexN7j6RrSVwCObNNeq3vgUxmZL7BZL5fk5nuFrCf7LZ6FeDgdR8lV79_XZ6cptPzP5OT8TQ1IlMx5XWdq6KWKtc057wQotStFDI3ihXUMFZzzUXRUCNrChnXpsFqDBhd1nUrJR8lX4e8G-_uegixunW97_DJKitYwXLBpELqaKAWegWV7VoXvTY4Glhb4zpoLcbHuaSCMUZLFL5tCchE-BsXug-hmsxn2-z3N2zdB9tBwCXYxTKGQdnC2YAb70Lw0FYbb9fa_6sYrV66Wr3rKjrZ4ARk8Xf9_yo_lp4Bo36i-A</recordid><startdate>20230301</startdate><enddate>20230301</enddate><creator>Boltar, K. O.</creator><creator>Iakovleva, N. I.</creator><creator>Lopukhin, A. A.</creator><creator>Vlasov, P. V.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>N95</scope><scope>XI7</scope><scope>ISR</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20230301</creationdate><title>Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range</title><author>Boltar, K. O. ; Iakovleva, N. I. ; Lopukhin, A. A. ; Vlasov, P. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-3bb768b567a07338449af5457c6180c11b3a348d0c5b0e23acd269ceca9bbf553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Barrier layers</topic><topic>Communications Engineering</topic><topic>Engineering</topic><topic>Indium antimonide</topic><topic>Intermetallic compounds</topic><topic>Multilayers</topic><topic>Networks</topic><topic>Photodiodes</topic><topic>Photometers</topic><topic>Photosensitivity</topic><topic>Radiation</topic><topic>Semiconductor materials</topic><topic>Semiconductors</topic><topic>Topology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Boltar, K. O.</creatorcontrib><creatorcontrib>Iakovleva, N. I.</creatorcontrib><creatorcontrib>Lopukhin, A. A.</creatorcontrib><creatorcontrib>Vlasov, P. V.</creatorcontrib><collection>CrossRef</collection><collection>Gale Business: Insights</collection><collection>Business Insights: Essentials</collection><collection>Gale In Context: Science</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of communications technology & electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Boltar, K. O.</au><au>Iakovleva, N. I.</au><au>Lopukhin, A. A.</au><au>Vlasov, P. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range</atitle><jtitle>Journal of communications technology & electronics</jtitle><stitle>J. Commun. Technol. Electron</stitle><date>2023-03-01</date><risdate>2023</risdate><volume>68</volume><issue>3</issue><spage>316</spage><epage>324</epage><pages>316-324</pages><issn>1064-2269</issn><eissn>1555-6557</eissn><abstract>Multilayer structures based on semiconductor materials of the antimonide group with InSb and Al
x
In
1 –
x
Sb absorbing layers, including structures with an InAlSb barrier layer (InSb/InAlSb/InSb), designed for the manufacturing of advanced photodetectors (PDs) that detect radiation in the mid-wave infrared (IR) range. On the basis of
p
–
i
–
n
and barrier structures grown by the MBE method, photosensitive elements (PSEs) of various topologies with InSb and Al
x
In
1 –
x
Sb absorbing layers were fabricated. It is shown that wide-gap Al
x
In
1 –
x
Sb ternary solutions, which detect radiation in the medium-wavelength region of the spectrum, are an alternative to the narrow-gap binary compound InSb, because, due to the wide-gap, photodiodes based on Al
x
In
1 –
x
Sb have lower currents and, therefore, noise. The average values of detectivity
D
* and noise-equivalent temperature difference (NETD) have been measured for various topology photodetectors, so
D
* was more than 10
11
cm W
–1
Hz
1/2
in
p
–
i
–
n
structures, and
D
* exceed of 10
12
cm W
–1
Hz
1/2
in barrier structures.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S106422692303004X</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1064-2269 |
| ispartof | Journal of communications technology & electronics, 2023-03, Vol.68 (3), p.316-324 |
| issn | 1064-2269 1555-6557 |
| language | eng |
| recordid | cdi_proquest_journals_2818174156 |
| source | SpringerNature Journals |
| subjects | Barrier layers Communications Engineering Engineering Indium antimonide Intermetallic compounds Multilayers Networks Photodiodes Photometers Photosensitivity Radiation Semiconductor materials Semiconductors Topology |
| title | Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range |
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