Optimization of annealing temperature on the formation CZTSe absorber layer
In the present work, we studied the optimization of annealing temperature on the formation of Cu 2 ZnSnSe 4 (CZTSe) thin films and its impact on the film properties. The CZTSe films were deposited on Mo/SLG substrate by the thermal evaporation method. All the elements of the compound were deposited...
Gespeichert in:
| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2023-06, Vol.129 (6), Article 414 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 6 |
| container_start_page | |
| container_title | Applied physics. A, Materials science & processing |
| container_volume | 129 |
| creator | Kumar, Vishvas Singh, Udai P. |
| description | In the present work, we studied the optimization of annealing temperature on the formation of Cu
2
ZnSnSe
4
(CZTSe) thin films and its impact on the film properties. The CZTSe films were deposited on Mo/SLG substrate by the thermal evaporation method. All the elements of the compound were deposited in the stack using its pellets. After the successful deposition of the films, the composition of the as deposited film was measured, then it was proceeded further for two steps annealing. The annealing parameter is one of the crucial steps for obtaining good quality kesterite-based absorber layer. In the present work, we have utilized two-step annealing to achieve the absorber layer suitable for device fabrication. The annealing in Se atmosphere were carried out at 230 °C for 10 min in first step followed by another 10 min annealing in second step with a temperature variation from 430 to 490 °C. The final temperature was varied to investigate the influence of annealing temperature on the absorber layer (CZTSe) film properties and its optimization. The films annealed between 470 and 490 °C are showing better structural, optical, electrical and morphological properties for further processing. |
| doi_str_mv | 10.1007/s00339-023-06694-y |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2813381566</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2813381566</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-5602662dcee83b17dc8e973cad20320f0029c584120badd2b57aec05fa0625d03</originalsourceid><addsrcrecordid>eNp9kE1LxDAQhoMouK7-AU8Fz9FJ0qbNUYpfuLAH14uXkKbTtcu2qUn3UH-90QrenMswzPPOwEPIJYNrBpDfBAAhFAUuKEipUjodkQVLBY-jgGOyAJXmtBBKnpKzEHYQK-V8QZ7Xw9h27acZW9cnrklM36PZt_02GbEb0Jvx4DGJu_Edk8b5bibLt80LJqYKzlfok72Z0J-Tk8bsA1789iV5vb_blI90tX54Km9X1AqmRppJ4FLy2iIWomJ5bQtUubCm5iA4NABc2axIGYfK1DWvstyghawxIHlWg1iSq_nu4N3HAcOod-7g-_hS84IJUbBMykjxmbLeheCx0YNvO-MnzUB_S9OzNB2l6R9peoohMYdChPst-r_T_6S-AAhXb_I</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2813381566</pqid></control><display><type>article</type><title>Optimization of annealing temperature on the formation CZTSe absorber layer</title><source>SpringerLink_现刊</source><creator>Kumar, Vishvas ; Singh, Udai P.</creator><creatorcontrib>Kumar, Vishvas ; Singh, Udai P.</creatorcontrib><description>In the present work, we studied the optimization of annealing temperature on the formation of Cu
2
ZnSnSe
4
(CZTSe) thin films and its impact on the film properties. The CZTSe films were deposited on Mo/SLG substrate by the thermal evaporation method. All the elements of the compound were deposited in the stack using its pellets. After the successful deposition of the films, the composition of the as deposited film was measured, then it was proceeded further for two steps annealing. The annealing parameter is one of the crucial steps for obtaining good quality kesterite-based absorber layer. In the present work, we have utilized two-step annealing to achieve the absorber layer suitable for device fabrication. The annealing in Se atmosphere were carried out at 230 °C for 10 min in first step followed by another 10 min annealing in second step with a temperature variation from 430 to 490 °C. The final temperature was varied to investigate the influence of annealing temperature on the absorber layer (CZTSe) film properties and its optimization. The films annealed between 470 and 490 °C are showing better structural, optical, electrical and morphological properties for further processing.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-023-06694-y</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Absorbers ; Annealing ; Applied physics ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Copper zinc tin selenide ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Optical properties ; Optimization ; Photovoltaic cells ; Physics ; Physics and Astronomy ; Processes ; Substrates ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2023-06, Vol.129 (6), Article 414</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-5602662dcee83b17dc8e973cad20320f0029c584120badd2b57aec05fa0625d03</citedby><cites>FETCH-LOGICAL-c319t-5602662dcee83b17dc8e973cad20320f0029c584120badd2b57aec05fa0625d03</cites><orcidid>0000-0002-5910-5275</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-023-06694-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-023-06694-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Kumar, Vishvas</creatorcontrib><creatorcontrib>Singh, Udai P.</creatorcontrib><title>Optimization of annealing temperature on the formation CZTSe absorber layer</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>In the present work, we studied the optimization of annealing temperature on the formation of Cu
2
ZnSnSe
4
(CZTSe) thin films and its impact on the film properties. The CZTSe films were deposited on Mo/SLG substrate by the thermal evaporation method. All the elements of the compound were deposited in the stack using its pellets. After the successful deposition of the films, the composition of the as deposited film was measured, then it was proceeded further for two steps annealing. The annealing parameter is one of the crucial steps for obtaining good quality kesterite-based absorber layer. In the present work, we have utilized two-step annealing to achieve the absorber layer suitable for device fabrication. The annealing in Se atmosphere were carried out at 230 °C for 10 min in first step followed by another 10 min annealing in second step with a temperature variation from 430 to 490 °C. The final temperature was varied to investigate the influence of annealing temperature on the absorber layer (CZTSe) film properties and its optimization. The films annealed between 470 and 490 °C are showing better structural, optical, electrical and morphological properties for further processing.</description><subject>Absorbers</subject><subject>Annealing</subject><subject>Applied physics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Copper zinc tin selenide</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Optimization</subject><subject>Photovoltaic cells</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Substrates</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK7-AU8Fz9FJ0qbNUYpfuLAH14uXkKbTtcu2qUn3UH-90QrenMswzPPOwEPIJYNrBpDfBAAhFAUuKEipUjodkQVLBY-jgGOyAJXmtBBKnpKzEHYQK-V8QZ7Xw9h27acZW9cnrklM36PZt_02GbEb0Jvx4DGJu_Edk8b5bibLt80LJqYKzlfok72Z0J-Tk8bsA1789iV5vb_blI90tX54Km9X1AqmRppJ4FLy2iIWomJ5bQtUubCm5iA4NABc2axIGYfK1DWvstyghawxIHlWg1iSq_nu4N3HAcOod-7g-_hS84IJUbBMykjxmbLeheCx0YNvO-MnzUB_S9OzNB2l6R9peoohMYdChPst-r_T_6S-AAhXb_I</recordid><startdate>20230601</startdate><enddate>20230601</enddate><creator>Kumar, Vishvas</creator><creator>Singh, Udai P.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-5910-5275</orcidid></search><sort><creationdate>20230601</creationdate><title>Optimization of annealing temperature on the formation CZTSe absorber layer</title><author>Kumar, Vishvas ; Singh, Udai P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-5602662dcee83b17dc8e973cad20320f0029c584120badd2b57aec05fa0625d03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Absorbers</topic><topic>Annealing</topic><topic>Applied physics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Copper zinc tin selenide</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties</topic><topic>Optimization</topic><topic>Photovoltaic cells</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Substrates</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumar, Vishvas</creatorcontrib><creatorcontrib>Singh, Udai P.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumar, Vishvas</au><au>Singh, Udai P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimization of annealing temperature on the formation CZTSe absorber layer</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2023-06-01</date><risdate>2023</risdate><volume>129</volume><issue>6</issue><artnum>414</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>In the present work, we studied the optimization of annealing temperature on the formation of Cu
2
ZnSnSe
4
(CZTSe) thin films and its impact on the film properties. The CZTSe films were deposited on Mo/SLG substrate by the thermal evaporation method. All the elements of the compound were deposited in the stack using its pellets. After the successful deposition of the films, the composition of the as deposited film was measured, then it was proceeded further for two steps annealing. The annealing parameter is one of the crucial steps for obtaining good quality kesterite-based absorber layer. In the present work, we have utilized two-step annealing to achieve the absorber layer suitable for device fabrication. The annealing in Se atmosphere were carried out at 230 °C for 10 min in first step followed by another 10 min annealing in second step with a temperature variation from 430 to 490 °C. The final temperature was varied to investigate the influence of annealing temperature on the absorber layer (CZTSe) film properties and its optimization. The films annealed between 470 and 490 °C are showing better structural, optical, electrical and morphological properties for further processing.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-023-06694-y</doi><orcidid>https://orcid.org/0000-0002-5910-5275</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0947-8396 |
| ispartof | Applied physics. A, Materials science & processing, 2023-06, Vol.129 (6), Article 414 |
| issn | 0947-8396 1432-0630 |
| language | eng |
| recordid | cdi_proquest_journals_2813381566 |
| source | SpringerLink_现刊 |
| subjects | Absorbers Annealing Applied physics Characterization and Evaluation of Materials Condensed Matter Physics Copper zinc tin selenide Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Optical properties Optimization Photovoltaic cells Physics Physics and Astronomy Processes Substrates Surfaces and Interfaces Thin Films |
| title | Optimization of annealing temperature on the formation CZTSe absorber layer |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T06%3A55%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optimization%20of%20annealing%20temperature%20on%20the%20formation%20CZTSe%20absorber%20layer&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=Kumar,%20Vishvas&rft.date=2023-06-01&rft.volume=129&rft.issue=6&rft.artnum=414&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/s00339-023-06694-y&rft_dat=%3Cproquest_cross%3E2813381566%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2813381566&rft_id=info:pmid/&rfr_iscdi=true |