Photoinduced Microwave Permittivity of Semiconductors: Exciton Mechanism

Significant differences observed in the behavior of photoinduced permittivity ε of semiconductors in the gigahertz (GHz) and terahertz (THz) ranges are explained within the framework of the exciton mechanism by the different position of these ranges relative to the frequencies of exciton interlevel...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of communications technology & electronics 2023-02, Vol.68 (2), p.151-155
Hauptverfasser:	Butylkin, V. S., Fisher, P. S., Kraftmakher, G. A., Kazantsev, Yu. N., Kalenov, D. S., Mal’tsev, V. P., Parkhomenko, M. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium selenides Communications Engineering Engineering Equipment and supplies Excitons Fiber optics Networks Permittivity Radio Phenomena in Solids and Plasma Semiconductors Terahertz frequencies Transmittance Waveguides
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!