Comparison of Electroless Ni-P and Co-W-P Diffusion Properties Against GaAs Substrate
The thermal stability of electroless nickel-phosphorus (Ni-P) film and cobalt-tungsten–phosphorus (Co-W-P) film deposited on GaAs substrate was investigated. X-ray photoelectron spectroscopy and x-ray diffraction measurements indicated that the Ni-P film changed from amorphous to crystalline by anne...
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| Veröffentlicht in: | Journal of electronic materials 2023-06, Vol.52 (6), p.4080-4090 |
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| creator | Nishizawa, Koichiro Matsumoto, Ayumu Nakagawa, Yasuyuki Sakuma, Hitoshi Goto, Seiki Fukumuro, Naoki Yae, Shinji |
| description | The thermal stability of electroless nickel-phosphorus (Ni-P) film and cobalt-tungsten–phosphorus (Co-W-P) film deposited on GaAs substrate was investigated. X-ray photoelectron spectroscopy and x-ray diffraction measurements indicated that the Ni-P film changed from amorphous to crystalline by annealing at 240°C for 1 h due to the diffusion of Ni into the GaAs substrate and the increase in P concentration in the Ni-P film. On the other hand, the crystallinity of the Co-W-P film did not change by annealing at 240°C for 1 h. Cross-sectional observation showed that the thickness of the crystallized Ni-P film did not change from 3 to 1000 h of high-temperature storage at 270°C, and no void was observed in the Ni-P film. Migration of Ni atoms could be suppressed by the crystallization of the Ni-P film. On the other hand, voids were formed in the Co-W-P film after high-temperature storage at 270°C for 100 h. Since the Co-W-P film consists of nanoscale crystalline and amorphous phases, atoms diffuse from the amorphous portion to the GaAs substrate.
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| doi_str_mv | 10.1007/s11664-023-10380-3 |
| format | Article |
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Graphical Abstract</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-023-10380-3</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Annealing ; Atomic properties ; Atoms & subatomic particles ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Cobalt ; Crystallization ; Diffusion ; Electrodes ; Electronics and Microelectronics ; Gallium arsenide ; High temperature ; Instrumentation ; Ion beams ; Materials Science ; Nickel ; Optical and Electronic Materials ; Original Research Article ; Phosphorus ; Photoelectrons ; Plating ; Radiation ; Solid State Physics ; Spectrum analysis ; Substrates ; Thermal stability ; Transistors</subject><ispartof>Journal of electronic materials, 2023-06, Vol.52 (6), p.4080-4090</ispartof><rights>The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-9dd8850ab26e9c4454544d1bc25ab346aa8dfb6273c8ad24a15fd14680fb218b3</citedby><cites>FETCH-LOGICAL-c319t-9dd8850ab26e9c4454544d1bc25ab346aa8dfb6273c8ad24a15fd14680fb218b3</cites><orcidid>0000-0003-1181-4811 ; 0000-0002-4077-6757 ; 0000-0002-8607-7476 ; 0000-0002-7731-4150</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-023-10380-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-023-10380-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Nishizawa, Koichiro</creatorcontrib><creatorcontrib>Matsumoto, Ayumu</creatorcontrib><creatorcontrib>Nakagawa, Yasuyuki</creatorcontrib><creatorcontrib>Sakuma, Hitoshi</creatorcontrib><creatorcontrib>Goto, Seiki</creatorcontrib><creatorcontrib>Fukumuro, Naoki</creatorcontrib><creatorcontrib>Yae, Shinji</creatorcontrib><title>Comparison of Electroless Ni-P and Co-W-P Diffusion Properties Against GaAs Substrate</title><title>Journal of electronic materials</title><addtitle>J. Electron. Mater</addtitle><description>The thermal stability of electroless nickel-phosphorus (Ni-P) film and cobalt-tungsten–phosphorus (Co-W-P) film deposited on GaAs substrate was investigated. X-ray photoelectron spectroscopy and x-ray diffraction measurements indicated that the Ni-P film changed from amorphous to crystalline by annealing at 240°C for 1 h due to the diffusion of Ni into the GaAs substrate and the increase in P concentration in the Ni-P film. On the other hand, the crystallinity of the Co-W-P film did not change by annealing at 240°C for 1 h. Cross-sectional observation showed that the thickness of the crystallized Ni-P film did not change from 3 to 1000 h of high-temperature storage at 270°C, and no void was observed in the Ni-P film. Migration of Ni atoms could be suppressed by the crystallization of the Ni-P film. On the other hand, voids were formed in the Co-W-P film after high-temperature storage at 270°C for 100 h. Since the Co-W-P film consists of nanoscale crystalline and amorphous phases, atoms diffuse from the amorphous portion to the GaAs substrate.
Graphical Abstract</description><subject>Annealing</subject><subject>Atomic properties</subject><subject>Atoms & subatomic particles</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Cobalt</subject><subject>Crystallization</subject><subject>Diffusion</subject><subject>Electrodes</subject><subject>Electronics and Microelectronics</subject><subject>Gallium arsenide</subject><subject>High temperature</subject><subject>Instrumentation</subject><subject>Ion beams</subject><subject>Materials Science</subject><subject>Nickel</subject><subject>Optical and Electronic Materials</subject><subject>Original Research Article</subject><subject>Phosphorus</subject><subject>Photoelectrons</subject><subject>Plating</subject><subject>Radiation</subject><subject>Solid State Physics</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Thermal stability</subject><subject>Transistors</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9kE1LAzEQhoMoWKt_wFPAczSTr6bHsmoViha06C1kd5Oypd2sye7Bf290BW8yh5mB552BB6FLoNdA6ewmASglCGWcAOWaEn6EJiBFXrV6P0YTyhUQybg8RWcp7SgFCRomaFOEQ2djk0KLg8d3e1f1MexdSvipIWts2xoXgbzl8bbxfkhNBtcxdC72jUt4sbVNm3q8tIuEX4Yy9dH27hydeLtP7uK3T9Hm_u61eCCr5-VjsViRisO8J_O61lpSWzLl5pUQMpeooayYtCUXylpd-1KxGa-0rZmwIH0NQmnqSwa65FN0Nd7tYvgYXOrNLgyxzS8N00BnnEnGMsVGqoohpei86WJzsPHTADXf-syoz2R95kef4TnEx1DKcLt18e_0P6kvX4xxlg</recordid><startdate>20230601</startdate><enddate>20230601</enddate><creator>Nishizawa, Koichiro</creator><creator>Matsumoto, Ayumu</creator><creator>Nakagawa, Yasuyuki</creator><creator>Sakuma, Hitoshi</creator><creator>Goto, Seiki</creator><creator>Fukumuro, Naoki</creator><creator>Yae, Shinji</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0003-1181-4811</orcidid><orcidid>https://orcid.org/0000-0002-4077-6757</orcidid><orcidid>https://orcid.org/0000-0002-8607-7476</orcidid><orcidid>https://orcid.org/0000-0002-7731-4150</orcidid></search><sort><creationdate>20230601</creationdate><title>Comparison of Electroless Ni-P and Co-W-P Diffusion Properties Against GaAs Substrate</title><author>Nishizawa, Koichiro ; Matsumoto, Ayumu ; Nakagawa, Yasuyuki ; Sakuma, Hitoshi ; Goto, Seiki ; Fukumuro, Naoki ; Yae, Shinji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-9dd8850ab26e9c4454544d1bc25ab346aa8dfb6273c8ad24a15fd14680fb218b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Annealing</topic><topic>Atomic properties</topic><topic>Atoms & subatomic particles</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Cobalt</topic><topic>Crystallization</topic><topic>Diffusion</topic><topic>Electrodes</topic><topic>Electronics and Microelectronics</topic><topic>Gallium arsenide</topic><topic>High temperature</topic><topic>Instrumentation</topic><topic>Ion beams</topic><topic>Materials Science</topic><topic>Nickel</topic><topic>Optical and Electronic Materials</topic><topic>Original Research Article</topic><topic>Phosphorus</topic><topic>Photoelectrons</topic><topic>Plating</topic><topic>Radiation</topic><topic>Solid State Physics</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Thermal stability</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nishizawa, Koichiro</creatorcontrib><creatorcontrib>Matsumoto, Ayumu</creatorcontrib><creatorcontrib>Nakagawa, Yasuyuki</creatorcontrib><creatorcontrib>Sakuma, Hitoshi</creatorcontrib><creatorcontrib>Goto, Seiki</creatorcontrib><creatorcontrib>Fukumuro, Naoki</creatorcontrib><creatorcontrib>Yae, Shinji</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nishizawa, Koichiro</au><au>Matsumoto, Ayumu</au><au>Nakagawa, Yasuyuki</au><au>Sakuma, Hitoshi</au><au>Goto, Seiki</au><au>Fukumuro, Naoki</au><au>Yae, Shinji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of Electroless Ni-P and Co-W-P Diffusion Properties Against GaAs Substrate</atitle><jtitle>Journal of electronic materials</jtitle><stitle>J. Electron. Mater</stitle><date>2023-06-01</date><risdate>2023</risdate><volume>52</volume><issue>6</issue><spage>4080</spage><epage>4090</epage><pages>4080-4090</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>The thermal stability of electroless nickel-phosphorus (Ni-P) film and cobalt-tungsten–phosphorus (Co-W-P) film deposited on GaAs substrate was investigated. X-ray photoelectron spectroscopy and x-ray diffraction measurements indicated that the Ni-P film changed from amorphous to crystalline by annealing at 240°C for 1 h due to the diffusion of Ni into the GaAs substrate and the increase in P concentration in the Ni-P film. On the other hand, the crystallinity of the Co-W-P film did not change by annealing at 240°C for 1 h. Cross-sectional observation showed that the thickness of the crystallized Ni-P film did not change from 3 to 1000 h of high-temperature storage at 270°C, and no void was observed in the Ni-P film. Migration of Ni atoms could be suppressed by the crystallization of the Ni-P film. On the other hand, voids were formed in the Co-W-P film after high-temperature storage at 270°C for 100 h. Since the Co-W-P film consists of nanoscale crystalline and amorphous phases, atoms diffuse from the amorphous portion to the GaAs substrate.
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| subjects | Annealing Atomic properties Atoms & subatomic particles Characterization and Evaluation of Materials Chemistry and Materials Science Cobalt Crystallization Diffusion Electrodes Electronics and Microelectronics Gallium arsenide High temperature Instrumentation Ion beams Materials Science Nickel Optical and Electronic Materials Original Research Article Phosphorus Photoelectrons Plating Radiation Solid State Physics Spectrum analysis Substrates Thermal stability Transistors |
| title | Comparison of Electroless Ni-P and Co-W-P Diffusion Properties Against GaAs Substrate |
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