Tungsten dichalcogenide WS2xSe2−2x films via single source precursor low-pressure CVD and their (thermo-)electric properties

Semiconducting transition metal dichalcogenides have gained increased interest as potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we present the deposition of stoichiometric WS2xSe2−2x (0 ≤ x ≤ 1) binary and ternary thin films using the single source precu...

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Veröffentlicht in:	Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2023, Vol.11 (17), p.9635-9645
Hauptverfasser:	Sethi, V, Runacres, D, Greenacre, V, Shao, Li, Hector, A L, Levason, W, de Groot, C H, Reid, G, Huang, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Chalcogenides Chemical vapor deposition Electric properties Electrical properties Graphene Low pressure Photoelectron spectroscopy Photoelectrons Power factor Precursors Raman spectroscopy Scanning electron microscopy Spectroscopy Spectrum analysis Stoichiometry Thin films Transition metal compounds Tungsten X-ray diffraction
Online-Zugang:	Volltext
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