Tungsten dichalcogenide WS2xSe2−2x films via single source precursor low-pressure CVD and their (thermo-)electric properties
Semiconducting transition metal dichalcogenides have gained increased interest as potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we present the deposition of stoichiometric WS2xSe2−2x (0 ≤ x ≤ 1) binary and ternary thin films using the single source precu...
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| Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2023, Vol.11 (17), p.9635-9645 |
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| container_title | Journal of materials chemistry. A, Materials for energy and sustainability |
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| creator | Sethi, V Runacres, D Greenacre, V Shao, Li Hector, A L Levason, W de Groot, C H Reid, G Huang, R |
| description | Semiconducting transition metal dichalcogenides have gained increased interest as potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we present the deposition of stoichiometric WS2xSe2−2x (0 ≤ x ≤ 1) binary and ternary thin films using the single source precursors, [WECl4(E′nBu2)] (E = S or Se; E′ = S or Se), via low-pressure chemical vapour deposition. Compositional and structural characterisations of the deposits have been performed by grazing-incidence X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy, confirming the phase purity and stoichiometry. Electrical characterisation via Hall measurements reveals high electrical conductivities for those films. Such high conductivity is likely related to Se and S vacancies in the films and can be tuned through an annealing process. The thermoelectric capabilities of the WS2xSe2−2x have been characterised with the use of variable-temperature Seebeck measurements, showing a peak power factor of 6 μW m−1 K−2 for the as-deposited WS2 film at 553 K. |
| doi_str_mv | 10.1039/d3ta00466j |
| format | Article |
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The thermoelectric capabilities of the WS2xSe2−2x have been characterised with the use of variable-temperature Seebeck measurements, showing a peak power factor of 6 μW m−1 K−2 for the as-deposited WS2 film at 553 K.</description><identifier>ISSN: 2050-7488</identifier><identifier>EISSN: 2050-7496</identifier><identifier>DOI: 10.1039/d3ta00466j</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Chalcogenides ; Chemical vapor deposition ; Electric properties ; Electrical properties ; Graphene ; Low pressure ; Photoelectron spectroscopy ; Photoelectrons ; Power factor ; Precursors ; Raman spectroscopy ; Scanning electron microscopy ; Spectroscopy ; Spectrum analysis ; Stoichiometry ; Thin films ; Transition metal compounds ; Tungsten ; X-ray diffraction</subject><ispartof>Journal of materials chemistry. 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The thermoelectric capabilities of the WS2xSe2−2x have been characterised with the use of variable-temperature Seebeck measurements, showing a peak power factor of 6 μW m−1 K−2 for the as-deposited WS2 film at 553 K.</description><subject>Chalcogenides</subject><subject>Chemical vapor deposition</subject><subject>Electric properties</subject><subject>Electrical properties</subject><subject>Graphene</subject><subject>Low pressure</subject><subject>Photoelectron spectroscopy</subject><subject>Photoelectrons</subject><subject>Power factor</subject><subject>Precursors</subject><subject>Raman spectroscopy</subject><subject>Scanning electron microscopy</subject><subject>Spectroscopy</subject><subject>Spectrum analysis</subject><subject>Stoichiometry</subject><subject>Thin films</subject><subject>Transition metal compounds</subject><subject>Tungsten</subject><subject>X-ray diffraction</subject><issn>2050-7488</issn><issn>2050-7496</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNo9T7FOwzAUtBBIVKULX2CJBYbAi9049ogKBaRKDC0wVk783LpKk2I70ImZmU_kS7AE4pa7G-5OR8hpDpc5cHVleNQAYyE2B2TAoICsHCtx-K-lPCajEDaQIAGEUgPysejbVYjYUuPqtW7qboWtM0hf5mw_R_b9-cX21LpmG-ib0zS4dtUgDV3va6Q7j3XvQ-dp071nyYXQe6ST5xuqW0PjGp2n54n8tssusME6elenWLdDHx2GE3JkdRNw9MdD8jS9XUzus9nj3cPkepbtWK5ixtBWmhudj9FIK03FGSLTwEoFtiqtZLmoEazmyRtjC2l5VQhUWBhZipIPydlvb5p-7THE5SY9aNPkkkmQHEqeS_4DbrVkTQ</recordid><startdate>2023</startdate><enddate>2023</enddate><creator>Sethi, V</creator><creator>Runacres, D</creator><creator>Greenacre, V</creator><creator>Shao, Li</creator><creator>Hector, A L</creator><creator>Levason, W</creator><creator>de Groot, C H</creator><creator>Reid, G</creator><creator>Huang, R</creator><general>Royal Society of Chemistry</general><scope>7SP</scope><scope>7SR</scope><scope>7ST</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>JG9</scope><scope>L7M</scope><scope>SOI</scope></search><sort><creationdate>2023</creationdate><title>Tungsten dichalcogenide WS2xSe2−2x films via single source precursor low-pressure CVD and their (thermo-)electric properties</title><author>Sethi, V ; Runacres, D ; Greenacre, V ; Shao, Li ; Hector, A L ; Levason, W ; de Groot, C H ; Reid, G ; Huang, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p219t-2efba3da14ed8f8db32ee2a02790fb7f8216ce0fa390fddf58f3b56e9e5d87673</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Chalcogenides</topic><topic>Chemical vapor deposition</topic><topic>Electric properties</topic><topic>Electrical properties</topic><topic>Graphene</topic><topic>Low pressure</topic><topic>Photoelectron spectroscopy</topic><topic>Photoelectrons</topic><topic>Power factor</topic><topic>Precursors</topic><topic>Raman spectroscopy</topic><topic>Scanning electron microscopy</topic><topic>Spectroscopy</topic><topic>Spectrum analysis</topic><topic>Stoichiometry</topic><topic>Thin films</topic><topic>Transition metal compounds</topic><topic>Tungsten</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sethi, V</creatorcontrib><creatorcontrib>Runacres, D</creatorcontrib><creatorcontrib>Greenacre, V</creatorcontrib><creatorcontrib>Shao, Li</creatorcontrib><creatorcontrib>Hector, A L</creatorcontrib><creatorcontrib>Levason, W</creatorcontrib><creatorcontrib>de Groot, C H</creatorcontrib><creatorcontrib>Reid, G</creatorcontrib><creatorcontrib>Huang, R</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Environment Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sethi, V</au><au>Runacres, D</au><au>Greenacre, V</au><au>Shao, Li</au><au>Hector, A L</au><au>Levason, W</au><au>de Groot, C H</au><au>Reid, G</au><au>Huang, R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tungsten dichalcogenide WS2xSe2−2x films via single source precursor low-pressure CVD and their (thermo-)electric properties</atitle><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle><date>2023</date><risdate>2023</risdate><volume>11</volume><issue>17</issue><spage>9635</spage><epage>9645</epage><pages>9635-9645</pages><issn>2050-7488</issn><eissn>2050-7496</eissn><abstract>Semiconducting transition metal dichalcogenides have gained increased interest as potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we present the deposition of stoichiometric WS2xSe2−2x (0 ≤ x ≤ 1) binary and ternary thin films using the single source precursors, [WECl4(E′nBu2)] (E = S or Se; E′ = S or Se), via low-pressure chemical vapour deposition. Compositional and structural characterisations of the deposits have been performed by grazing-incidence X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy, confirming the phase purity and stoichiometry. Electrical characterisation via Hall measurements reveals high electrical conductivities for those films. Such high conductivity is likely related to Se and S vacancies in the films and can be tuned through an annealing process. The thermoelectric capabilities of the WS2xSe2−2x have been characterised with the use of variable-temperature Seebeck measurements, showing a peak power factor of 6 μW m−1 K−2 for the as-deposited WS2 film at 553 K.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d3ta00466j</doi><tpages>11</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of materials chemistry. A, Materials for energy and sustainability, 2023, Vol.11 (17), p.9635-9645 |
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| source | Royal Society Of Chemistry Journals |
| subjects | Chalcogenides Chemical vapor deposition Electric properties Electrical properties Graphene Low pressure Photoelectron spectroscopy Photoelectrons Power factor Precursors Raman spectroscopy Scanning electron microscopy Spectroscopy Spectrum analysis Stoichiometry Thin films Transition metal compounds Tungsten X-ray diffraction |
| title | Tungsten dichalcogenide WS2xSe2−2x films via single source precursor low-pressure CVD and their (thermo-)electric properties |
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