Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition

Boron-doped diamond (B-diamond) MOS capacitors and MOSFETs are fabricated and characterized. The Al2O3 gate insulator is deposited by an atomic layer deposition (ALD) technique with ozone as oxygen precursor. Leakage current density for the Al2O3 (ozone)/B-diamond MOS capacitor is [Formula Omitted]...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-05, Vol.70 (5), p.2199
Hauptverfasser:	Liu, Jiangwei, Tokuyuki Teraji, Da, Bo, Koide, Yasuo
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Atomic layer epitaxy Boron Capacitance Capacitors Diamonds Electric potential Electrical properties Leakage current MOSFETs Oxygen Ozone Precursors Voltage
Online-Zugang:	Volltext
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