1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review

Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained unaddressed toward the fabrication of 1D and 2D FET gas sensors for real‐field applications, which are related to properties, synthesis, and integration of 1D and 2D materials into the transistor architecture. This review paper encompasses the whole assortment of 1D—i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)—and 2D—i.e., graphene, transition metal dichalcogenides (TMD), phosphorene—materials used in FET gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties of these devices. Eventually, pros and cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, pointing out weakness and highlighting future directions. Here, the whole assortment of 1D (metal oxide semiconductors, silicon nanowires, carbon nanotubes) and 2D (graphene, transition metal dichalcogenides, phosphorene) materials used in field effect transistor (FET) gas sensors is reviewed, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties, then pointing out weakness and highlighting future directions.