Investigating the Reliability of a Negative Capacitance Field Effect Transistor Regarding the Electric Field Across the Oxide Layer

The observation of room temperature sub-60 mV/dec subthreshold slope in MOSFET with ferroelectric layers in the gate stacks has attracted much attention. However, little consideration is given to reliability, which affects the long-term stability of the device. In this work, we investigate the relia...

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