Dislocation Density Reduction in MOVPE-Grown (211) CdTe/Si by Post-Growth Patterning and Annealing

We studied the effectiveness of post-growth patterning and annealing on threading dislocation (TD) reduction in (211) CdTe/Si epilayers grown using metalorganic vapor-phase epitaxy (MOVPE). Sixty-micrometer-wide square patterns were formed on the as-grown CdTe samples using photolithography and then...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 2023-05, Vol.52 (5), p.3431-3435
Hauptverfasser:	Chaudhari, B. S., Niraula, M., Takagi, Y., Okumura, R., Sharma, K. P., Maruyama, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Characterization and Evaluation of Materials Chemistry and Materials Science Dislocation density Electronics and Microelectronics Epitaxial growth Etch pits Instrumentation Islands Materials Science Metalorganic chemical vapor deposition Molecular beam epitaxy Morphology Optical and Electronic Materials Original Research Article Performance evaluation Photolithography Sensors Solid State Physics Threading dislocations Vapor phase epitaxy
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!