Dislocation Density Reduction in MOVPE-Grown (211) CdTe/Si by Post-Growth Patterning and Annealing

We studied the effectiveness of post-growth patterning and annealing on threading dislocation (TD) reduction in (211) CdTe/Si epilayers grown using metalorganic vapor-phase epitaxy (MOVPE). Sixty-micrometer-wide square patterns were formed on the as-grown CdTe samples using photolithography and then...

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Veröffentlicht in:Journal of electronic materials 2023-05, Vol.52 (5), p.3431-3435
Hauptverfasser: Chaudhari, B. S., Niraula, M., Takagi, Y., Okumura, R., Sharma, K. P., Maruyama, T.
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container_end_page 3435
container_issue 5
container_start_page 3431
container_title Journal of electronic materials
container_volume 52
creator Chaudhari, B. S.
Niraula, M.
Takagi, Y.
Okumura, R.
Sharma, K. P.
Maruyama, T.
description We studied the effectiveness of post-growth patterning and annealing on threading dislocation (TD) reduction in (211) CdTe/Si epilayers grown using metalorganic vapor-phase epitaxy (MOVPE). Sixty-micrometer-wide square patterns were formed on the as-grown CdTe samples using photolithography and then subjected to ex situ annealing in a flowing hydrogen environment. The annealing temperature was varied from 550°C to 800°C, then held at this temperature for a fixed duration of 5 min. The TD densities were determined using the etch pit density (EPD) technique. A comparison of EPD values revealed that the patterned samples had lower EPD values than the unpatterned samples annealed under similar conditions. This suggests that annealing promotes dislocation glide to the sidewalls of the islands and is thus more effective at dislocation removal for the patterned samples in comparison to the unpatterned samples.
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subjects Annealing
Characterization and Evaluation of Materials
Chemistry and Materials Science
Dislocation density
Electronics and Microelectronics
Epitaxial growth
Etch pits
Instrumentation
Islands
Materials Science
Metalorganic chemical vapor deposition
Molecular beam epitaxy
Morphology
Optical and Electronic Materials
Original Research Article
Performance evaluation
Photolithography
Sensors
Solid State Physics
Threading dislocations
Vapor phase epitaxy
title Dislocation Density Reduction in MOVPE-Grown (211) CdTe/Si by Post-Growth Patterning and Annealing
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