Crystal orientation effects on the optical properties of wurtzite GaN/AlN quantum dots on semi-polar substrates
The study of the optical properties of epitaxial quantum dots is important in the development of high-performance opto-electronic devices and room-temperature quantum light sources. This study focuses on the effects of crystal orientation on the spontaneous emission peak of wurtzite GaN/AlN quantum...
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| Veröffentlicht in: | Optical and quantum electronics 2023-05, Vol.55 (5), Article 466 |
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| creator | Park, Seoung-Hwan Ahn, Doyeol |
| description | The study of the optical properties of epitaxial quantum dots is important in the development of high-performance opto-electronic devices and room-temperature quantum light sources. This study focuses on the effects of crystal orientation on the spontaneous emission peak of wurtzite GaN/AlN quantum dots grown on semi-polar substrates. Theoretical analysis shows that a tenfold increase in the spontaneous emission peak can occur as the crystal orientation changes from
θ
=
0
∘
to
θ
=
90
∘
. This significant shift is attributed to the change in the optical dipole matrix elements, which is caused by the change in the screening of the built-in potential of the wurtzite quantum dots with the variation in crystal orientation. The spontaneous emission peak is seen to increase rapidly when the crystal angle exceeds
θ
=
50
∘
. |
| doi_str_mv | 10.1007/s11082-023-04721-z |
| format | Article |
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θ
=
0
∘
to
θ
=
90
∘
. This significant shift is attributed to the change in the optical dipole matrix elements, which is caused by the change in the screening of the built-in potential of the wurtzite quantum dots with the variation in crystal orientation. The spontaneous emission peak is seen to increase rapidly when the crystal angle exceeds
θ
=
50
∘
.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-023-04721-z</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Computer Communication Networks ; Crystal structure ; Dipoles ; Electrical Engineering ; Electronic devices ; Emission analysis ; Gallium nitrides ; Lasers ; Light sources ; Optical Devices ; Optical properties ; Optics ; Optoelectronic devices ; Photonics ; Physics ; Physics and Astronomy ; Quantum dots ; Room temperature ; Spontaneous emission ; Substrates ; Wurtzite</subject><ispartof>Optical and quantum electronics, 2023-05, Vol.55 (5), Article 466</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c314t-11f6e13eaffcfacf6ea97ad695b43d51e57f17b4b98adfd8241e667c59253ce73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11082-023-04721-z$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11082-023-04721-z$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Park, Seoung-Hwan</creatorcontrib><creatorcontrib>Ahn, Doyeol</creatorcontrib><title>Crystal orientation effects on the optical properties of wurtzite GaN/AlN quantum dots on semi-polar substrates</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>The study of the optical properties of epitaxial quantum dots is important in the development of high-performance opto-electronic devices and room-temperature quantum light sources. This study focuses on the effects of crystal orientation on the spontaneous emission peak of wurtzite GaN/AlN quantum dots grown on semi-polar substrates. Theoretical analysis shows that a tenfold increase in the spontaneous emission peak can occur as the crystal orientation changes from
θ
=
0
∘
to
θ
=
90
∘
. This significant shift is attributed to the change in the optical dipole matrix elements, which is caused by the change in the screening of the built-in potential of the wurtzite quantum dots with the variation in crystal orientation. The spontaneous emission peak is seen to increase rapidly when the crystal angle exceeds
θ
=
50
∘
.</description><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>Crystal structure</subject><subject>Dipoles</subject><subject>Electrical Engineering</subject><subject>Electronic devices</subject><subject>Emission analysis</subject><subject>Gallium nitrides</subject><subject>Lasers</subject><subject>Light sources</subject><subject>Optical Devices</subject><subject>Optical properties</subject><subject>Optics</subject><subject>Optoelectronic devices</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum dots</subject><subject>Room temperature</subject><subject>Spontaneous emission</subject><subject>Substrates</subject><subject>Wurtzite</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK7-AU8Bz3Hz0TTtcVn8gmW9KHgLaTvRLt2mm6TI7q83WsGbp5lh3ued4UXomtFbRqlaBMZowQnlgtBMcUaOJ2jGpOKkYOrtFM2ooDkpSlaeo4sQtpTSPJN0htzKH0I0HXa-hT6a2Loeg7VQx4BTGz8AuyG2dZIM3g3gYwtpY_Hn6OOxjYAfzGax7DZ4P5o-jjvcuAkNsGvJ4DrjcRirEL2JEC7RmTVdgKvfOkev93cvq0eyfn54Wi3XpBYsi4QxmwMTYKytranTYEplmryUVSYayUAqy1SVVWVhGtsUPGOQ56qWJZeiBiXm6GbyTU_vRwhRb93o-3RSc1VmqpA550nFJ1XtXQgerB58uzP-oBnV38HqKVidgtU_wepjgsQEhSTu38H_Wf9DfQFEMH7p</recordid><startdate>20230501</startdate><enddate>20230501</enddate><creator>Park, Seoung-Hwan</creator><creator>Ahn, Doyeol</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20230501</creationdate><title>Crystal orientation effects on the optical properties of wurtzite GaN/AlN quantum dots on semi-polar substrates</title><author>Park, Seoung-Hwan ; Ahn, Doyeol</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c314t-11f6e13eaffcfacf6ea97ad695b43d51e57f17b4b98adfd8241e667c59253ce73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>Crystal structure</topic><topic>Dipoles</topic><topic>Electrical Engineering</topic><topic>Electronic devices</topic><topic>Emission analysis</topic><topic>Gallium nitrides</topic><topic>Lasers</topic><topic>Light sources</topic><topic>Optical Devices</topic><topic>Optical properties</topic><topic>Optics</topic><topic>Optoelectronic devices</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum dots</topic><topic>Room temperature</topic><topic>Spontaneous emission</topic><topic>Substrates</topic><topic>Wurtzite</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Seoung-Hwan</creatorcontrib><creatorcontrib>Ahn, Doyeol</creatorcontrib><collection>CrossRef</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Seoung-Hwan</au><au>Ahn, Doyeol</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystal orientation effects on the optical properties of wurtzite GaN/AlN quantum dots on semi-polar substrates</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2023-05-01</date><risdate>2023</risdate><volume>55</volume><issue>5</issue><artnum>466</artnum><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>The study of the optical properties of epitaxial quantum dots is important in the development of high-performance opto-electronic devices and room-temperature quantum light sources. This study focuses on the effects of crystal orientation on the spontaneous emission peak of wurtzite GaN/AlN quantum dots grown on semi-polar substrates. Theoretical analysis shows that a tenfold increase in the spontaneous emission peak can occur as the crystal orientation changes from
θ
=
0
∘
to
θ
=
90
∘
. This significant shift is attributed to the change in the optical dipole matrix elements, which is caused by the change in the screening of the built-in potential of the wurtzite quantum dots with the variation in crystal orientation. The spontaneous emission peak is seen to increase rapidly when the crystal angle exceeds
θ
=
50
∘
.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-023-04721-z</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Optical and quantum electronics, 2023-05, Vol.55 (5), Article 466 |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Characterization and Evaluation of Materials Computer Communication Networks Crystal structure Dipoles Electrical Engineering Electronic devices Emission analysis Gallium nitrides Lasers Light sources Optical Devices Optical properties Optics Optoelectronic devices Photonics Physics Physics and Astronomy Quantum dots Room temperature Spontaneous emission Substrates Wurtzite |
| title | Crystal orientation effects on the optical properties of wurtzite GaN/AlN quantum dots on semi-polar substrates |
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